Metal-Insulator-Semiconductor High Electron Mobility Transistor

Comparison of Characteristics of MISHEMT/MISFET/HEMT/MESFET (ATLAS Device Simulator Results)

S-Parameters

(V_ds=0.1V freq=20GHz)

S₁₁-V_gs (IMG, REAL)

S₁₂-V_gs (IMG, REAL)

S₂₁-V_gs (IMG, REAL)

S₂₂-V_gs (IMG, REAL)

(V_ds=0.1V )

S₁₁ (IMG, REAL)

S₁₂ (IMG, REAL)

S₂₁ (IMG, REAL)

S₂₂(IMG, REAL)

H-Parameters

(V_ds=0.1V freq=20GHz)

H₁₁-V_gs (IMG, REAL)

H₁₂-V_gs (IMG, REAL)

H₂₁-V_gs (IMG, REAL)

H₂₂-V_gs (IMG, REAL)

(V_ds=0.1V)

H₁₁ (IMG, REAL)

H₁₂ (IMG, REAL)

H₂₁ (IMG, REAL)

H₂₂ (IMG, REAL)

Y-Parameters

(V_ds=0.1V freq=20GHz)

Y₁₁-V_gs (IMG, REAL)

Y₁₂-V_gs (IMG, REAL)

Y₂₁-V_gs (IMG, REAL)

Y₂₂-V_gs (IMG, REAL)

(V_ds=0.1V)

Y₁₁ (IMG, REAL)

Y₁₂ (IMG, REAL)

Y₂₁ (IMG, REAL)

Y₂₂ (IMG, REAL)

Simulated Results on

• MISHEMT
• (Variation with gate voltage)
• (Variation with Frequency)
• Parameters
• Gains