Metal-Insulator-Semiconductor High Electron Mobility Transistor
Comparison of
Characteristics of MISHEMT/MISFET/HEMT/MESFET (ATLAS Device
Simulator Results)
(Vds=0.1V freq=20GHz)
Drain Current
Capacitances
Gate Capacitance:
Source Capacitance:
Drain Capacitance:
Conductances
Gate Conductance:
Source Conductance:
Drain Conductance:
