Metal-Insulator-Semiconductor High Electron Mobility Transistor

Comparison of Characteristics of MISHEMT/MISFET/HEMT/MESFET (ATLAS Device Simulator Results)
(V_ds=0.1V)

Capacitances

Gate Capacitance:

C_gs Characteristics

C_gd Characteristics

C_gg Characteristics

Source Capacitance:

C_ss Characteristics

C_sd Characteristics

C_sg Characteristics

Drain Capacitance:

C_ds Characteristics

C_dd Characteristics

C_dg Characteristics

Conductances

Gate Conductance:

G_gs Characteristics

G_gd Characteristics

G_gg Characteristics

Source Conductance:

G_ss Characteristics

G_sd Characteristics

G_sg Characteristics

Drain Conductance:

G_ds Characteristics

G_dd Characteristics

G_dg Characteristics

Simulated Results on

• MISHEMT
• (Variation with gate voltage)
• (Variation with Frequency)
• Parameters
• Gains