Metal-Insulator-Semiconductor High Electron Mobility Transistor

Comparison of Characteristics of MISHEMT/MISFET/HEMT/MESFET (ATLAS Device Simulator Results)

(V_ds=0.1V freq=20GHz)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Maximum Transducer Power Gain

(V_ds=0.1V)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Maximum Transducer Power Gain

 

Simulated Results on

• MISHEMT
• (Variation with gate voltage)
• (Variation with Frequency)
• Parameters
• Gains