FAILUREMECHANISMS IN SILICONSEMICONDUCTORDEVICES

Failure

Relevant

Acceleration

Acceleration(Ea = apparent activation energyfor temp.)

Ea=1.0-1.05eV
(depends uponion density) Ea=0.2-1.0eV
V^g,g(T) = 1-4.4

Ea= 1.3eV (slow trapping) Ea[!]-1eV (hotelectron injection)

Ea= 0.5-1.2eV
J^g,g(T) = 1-4

Surfacecharge

Dielectric
breakdown

Charge
injection

Electromigration

Mobileions,V,T

V, T

T

V, T

V, T, Qf

V, T

T, J, A,gradients ofT and J,grain size

Contamination, H,V, T

T, J

Corrosion
(chemical
galvanic,
electrolytic

Contact
degradation

H,V, T

StrongH effect
Ea[!]0.3- 1.1eV
(for electrolysis)
V may have thresholds

T, metals,
impurities

Varied