S

OMEBIPOLARDEVICEPROBLEMS,

ANDPOTENTIALCAUSES

Problem

Potential Causes

Other Device Characteristics Affected

Confirmation Comments

HightVSAT

(1)High VCE offset:
*Excess recombinationLow beta
Sites (EG.Gold)
*Large differenceVeb. VcbMeasurements
BetweenVebandVcb
*Schottky contactto
Collector(nodeepN+
tocollector contact
(2) HighRSAT:
*Shallow (or no)deepN+
*Lightly doped(orno)BurriedlayerRs
Buriedlayer
*Lightly dopedEPIBVcbo,BVsco
(Ingeneral,highresistance from collector contacttobase)

C.S.

C.S. C.S..

S.R.P.

S.R.P.