Metal-insulator Geometries

Comparison of Gate Geometries on HEMT(G-gate, T-gate and N-gate) (ATLAS Device Simulator Results)
(V_ds=0.1V V_gs=-0.4V)

(V_ds=0.1V freq=20GHz)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Maximum Transducer Power Gain

(V_ds=0.1V V_gs=-0.4V)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Simulated Results on

• Metal-Insulator Geometries
• Freq=20GHz (Variation with gate voltage)
• Vgs = -0.4V (Variation with frequency)
• Parameters
• Gains