Metal-insulator Geometries
Comparison of
Gate Geometries on HEMT(G-gate, T-gate and N-gate) (ATLAS Device
Simulator Results)
(Vds=0.1V Vgs=-0.4V)
Capacitances
Gate Capacitance:
Source Capacitance:
Drain Capacitance:
Conductances
Gate Conductance:
Source Conductance:
Drain Conductance:
