Gate-Stack MISHEMT

Comparison of Gate Stack Variation on HEMT(G-shape, T-shape and N-shape) (ATLAS Device Simulator Results)

Gains

(V_ds=0.1V freq=20GHz)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Maximum Transducer Power Gain

(V_ds=0.1V V_gs=-1.5V)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Maximum Transducer Power Gain

Simulated Results on

• Gate-Stack Variation
• Freq=20GHz (Variation of Gate Voltage)
• Vgs = -1.5V (Variation of Frequency)
• Parameters
• Gains