Gate-Stack MISHEMT

Comparison of Gate Stack Variation on HEMT(G-shape, T-shape and N-shape) (ATLAS Device Simulator Results)
(V_ds=0.1V V_gs=-1.5V)

Capacitances

Gate Capacitance:

C_gs Characteristics

C_gd Characteristics

C_gg Characteristics

Source Capacitance:

C_ss Characteristics

C_sd Characteristics

C_sg Characteristics

Drain Capacitance:

C_ds Characteristics

C_dd Characteristics

C_dg Characteristics

Conductances

Gate Conductance:

G_gs Characteristics

G_gd Characteristics

G_gg Characteristics

Source Conductance:

G_ss Characteristics

G_sd Characteristics

G_sg Characteristics

Drain Conductance:

G_ds Characteristics

G_dd Characteristics

G_dg Characteristics

Simulated Results on

• Gate-Stack Variation
• Freq=20GHz (Variation of Gate Voltage)
• Vgs = -1.5V (Variation of Frequency)
• Parameters
• Gains