Dual Channel High Electron Mobility Transistor

Comparison of Gate Geometries on DC-HEMT (N-gate, L-gate, T-gate)

Gains

(V_ds=0.1V freq=20GHz)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Maximum Transducer Power Gain

(V_ds=0.1V V_gs=-1.6V)

Current Gain

Stern Stability Factor

Maximum Stable Gain

Maximum Available Gain

Unilateral Power Gain

Maximum Transducer Power Gain

 

Simulated Results on

• Dual Channel HEMT
• Freq=20GHz (Variation with gate voltage)
• Vgs = -1.6V (Variation with frequency)
• Parameters
• Gains