Dual Channel High Electron Mobility Transistor
Comparison of
Gate Geometries on DC-HEMT (N-gate,
L-gate, T-gate)
(Vds=0.1V Vgs=-1.6V)
Capacitances
Gate Capacitance:
Source Capacitance:
Drain Capacitance:
Conductances
Gate Conductance:
Source Conductance:
Drain Conductance:
