Here's my resume if you're interested.

I'm interested in the properties of silicon-germanium and my research goal is to understand the role of strain on the electron and hole mobility in vertical SiGe MOSFETs, and decoupling it from the enhancement in mobility due to the presence of germanium alone. I'm also studying vertical MOSFETs with high-K gate dielectric materials such as CVD-deposited hafnium-oxide.

Here are a couple of papers where I'm author/co-author (they are in portable document format or pdf):
 

S. Jayanarayanan, F. Prins, X. Chen, S. Banerjee, "Enhanced Mobility in 100 nm strained SiGe vertical PMOSFETs fabricated by UHVCVD," Proceedings of the Materials Research Symposium, MRS, November 2001.

"Hole and Electron Mobility Enhancement in Strained SiGe Vertical MOSFETs," IEEE Trans. Electron Devices, Vol. 48, No.9, September 2001.