Work Function Variation in HEMT

Comparison of Gate Work Function Variation on HEMT(G-shape, T-shape and N-shape) (ATLAS Device Simulator Results)

(V_ds=0.1V freq=20GHz)

Drain Current

I_d-V_gs characteristics

I_g-V_gs characteristics

Capacitances

Gate Capacitance:

C_gs-V_gs Characteristics

C_gd-V_gs Characteristics

C_gg-V_gs Characteristics

Source Capacitance:

C_ss-V_gs Characteristics

C_sd-V_gs Characteristics

C_sg-V_gs Characteristics

Drain Capacitance:

C_ds-V_gs Characteristics

C_dd-V_gs Characteristics

C_dg-V_gs Characteristics

Conductances

Gate Conductance:

G_gs-V_gs Characteristics

G_gd-V_gs Characteristics

G_gg-V_gs Characteristics

Source Conductance:

G_ss-V_gs Characteristics

G_sd-V_gs Characteristics

G_sg-V_gs Characteristics

Drain Conductance:

G_ds-V_gs Characteristics

G_dd-V_gs Characteristics

G_dg-V_gs Characteristics

Cut-off frequency

Simulated Results on

• Work function Variation
• Freq=20GHz (Variation of Gate Voltage)
• Vgs = -0.4V (Variation of Frequency)
• Parameters
• Gains