Rakesh Sohal   Ph. D. Physics (BTU Cottbus Germany )   M.Tech. Materials Science & Engineering (IIT Kharagpur INDIA)   M.Sc. Physics (M D U Rohtak INDIA)   Present Address   IHP/BTU Joint Lab   BTU Cottbus   Konrad-Wachsmann-Allee 1   03013 Cottbus, Germany   Mobile: 0049 17640098886   Office: 0049 355 69 3981   Alernate E-mails: [email protected], [email protected]   Homepage: www.geocities.com/rakesh_sohal   Nothing is perfect, but one should try to go closer and closer to perfection.

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Research Interests

Play with the nature, but ofcourse, with the help of nature.

Thin Film Growth: CVD, thermal and electron beam evaporation of Wide Bandgap Semiconductors and High-k Gate Dielectics,

Spectroscopic Investigation of Surface and Interface of Semiconductors and Dielectrics (SiO₂ and rare-earth oxides),
and Electrical Characterization.

Doctoral Thesis Title

CVD growth of (001) and (111) 3C-SiC Epilayers and Their Interface Reactivity with Praseodymium Oxide Dielectric Layers

Abstract

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Latest Publications

Rakesh Sohal, Christian Walczyk, Peter Zaumseil, Dirk Wolansky, Alexander Fox, Bernd Tillack, Hans-Joachim Müssig, Thomas Schroeder "Thermal oxidation of CVD grown tungsten layers on Si substrates for embedded non-volatile memory applications" Thin Solid Films 517 (2009) 4534-4539

K. Henkel, R. Sohal, C. Schwiertz, Y. Burkov, M. Torche, D. Schmeißer "Al-Oxynitride Buffer Layer Facilities for PrO_X/SiC Interfaces" MRS Proceedings 996 (2007) H5-23

R. Sohal, M. Torche, K. Henkel, P. Hoffman, M. Tallarida and D. Schmeißer "Al-Oxynitrides as a buffer layer for Pr₂O₃/SiC interfaces" Materials Science in Semiconductor Processing 9(6) (2006) 945-948

Complete list

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