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Curriculum Vitae
Present Address:
Dr. Rakesh Sohal
IHP/BTU Joint Lab
BTU Cottbus
Konrad-Wachsmann-Allee 1
03013 Cottbus, Germany
Mobile: 0049 17640098886
Office: 0049 355 69 3981
E-mails: [email protected], [email protected]
| Permanent Address:
Dr. Rakesh Sohal s/o Shri Balwan Singh
H. No. 38/8, Dehri Mohalla
Near Ambedkar Dharamshala
Rohtak - 124001
Haryana INDIA
Phone: (within India) 094167 66553
(from abroad) 0091 94167 66553
E-Mail: [email protected]
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Education
Ph. D. (Physics)
Angewandte Physik-Sensorik
Brandenburgische Technische Universitaet Cottbus Germany
Aug-2006
Thesis: Growth of 3C-SiC Epilayers and Their Interface Reactivity with Praseodymium Oxide Dielectric Layers
Master of Technology (Materials Science & Engineering)
Indian Institute Of Technology, "IIT" Kharagpur,
Aug-2002-March-2003
Overall CGPA: 7.74/10
Thesis: Electrical Contacts to GaAs for Optoelectronics Applications
Master of Science (Physics)
Maharshi Dayanand University - Rohtak, Haryana INDIA,
June-1998 - May-2000
Bachelor of Science (Physics, Chemistry and Maths)
Vaish College Rohtak
June-1995 - May-1998
Affiliated to MDU Rohtak, Haryana
Senior Secondary (10+2)(CBSE) with Physics, Chemistry, Maths & Engg. Drawing
BSF Senior Secondary School Tekanpur
April-1994
Lab Experience
Thin film synthesis: Chemical Vapour Deposition, Plasma Enhanced CVD, Physical Deposition Unit - Thermal and E-Beam Evaporation
Materials Characterization: X-rays Photoelectron Spectroscpy (XPS), Synchrotron Radiation XPS, Fourier Transformed Infra-red Spectroscopy (FTIR), X-rays Diffraction (XRD)
Ph. D. Dissertation: Short description
3C-SiC Epi-growth: In this work, CVD growth and characterization (with Synchrotron Radiation Photoelectron Spectroscopy, FTIR, XRD, SEM, EELS) of 3C-SiC epi-layers on silicon substrates was performed. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100�C and 1150�C has been determined to be the optimal temperature for 3C-SiC growth on Si(111) and Si(001) substrates respectively.
Dielectrics on 3C-SiC: The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in different steps was useful in reducing and suppressing the graphite like carbon clustering at the SiO2/SiC interface. Clean and graphite-free SiO2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr2O3 on silicon carbide, plausible interlayers, Pr-Silicate and Aluminium oxynitride, have been investigated. Praseodymium silicate was successfully prepared via complete consumption of SiO2 and simultaneously suppressing the graphitic carbon formation. Furthermore we found AlON interlayer to be more stable. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. We found that such layers act as a reaction barrier between Pr2O3 and SiC, and simultaneously provide higher band offsets. There is a possibility of improving the high-k/SiC interface quality by improving AlON layers towards pure AlN on SiC epilayers.
List of selected publications
Lectures Qualified
During M. Tech.
Semiconductor Devices and Modelling
Crystal Growth and Characterization
Semiconductor Materials and Devices
Thin Film Technology
Semiconductor Technology
Optoelectronic Materials and Devices
Magnetic and Superconducting Properties of Solids
Science and Technology of Polymers
Ceramic Technology
Structure and Properties of Materials
Techniques of Materials Characterization
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During M. Sc. Physics
Quantum Mechanics I
Solid State Physics
Electronics Basics
Classical and Statistical Mechanics
Mathematical Physics and Group Theory
Quantum Mechanics II
Electronics II
Spectroscopy and Lasers
Nuclear Physics
Electrodynamics
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Presentations
Tungsten Oxide for Nonvolatile Memory Applications
Developement of Tungsten Oxide based Nonvolatile Memory Cells
Nonvolatile Memory Device Technology: Foundation
CVD Growth of (111) and (001) 3C-SiC Epilayers and Their Interface Reactivity with
Praseodymium Oxide Dielectric Layers
GaN - Research and Developments
Chemical Vapour Deposition of 3C-SiC - An Introduction
Hall Effect and Its Applications
Chopper Amplifier and Its Applications
Integral and Fractional Quantized Hall Effect and Their Applications
Optoelectronic Materials and Devices
Superconductivity and Emerging Superconductor Magnesium Diboride
Masters Thesis Defence: Electrical Contacts to GaAs for Optoelectronics Applications
Additional Information
Training for Micro Electro Mechanical Systems [MEMS]
from IIT Madras
Topics UnCovered:
IC Technology, Bulk micromachining, Surface micromachining, High aspect ratio microstructures, Materials for MEMS, Mechanical design analysis and Characterization, Micro accelerometers, Microactuators Microfluidics, Optical MEMS, Pressure sensors, RF MEMS, Sensing and Actuation Mechanisms, BioMEMS.
Awards & Honours
DFG Research Fellowship (2007)
MHRD Scholarship from Govt. Of India for Masters degree program (Aug.2001 � March 2003)
Qualified the all India competition �Graduate Aptitude Test for Engineering� (GATE) with 71.42 percentile (March 2001)
Mathematics Olympiad Merit Certificate (1994)
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References
Dr. Thomas Schroeder
IHP Microelectronics/Materials Research
Im Technologiepark 25
D-15236 Frankfurt (O)
Phone Within Germany: 0335-5625-318
From Outside: +49-335-5625-318
E-mail:[email protected]
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Prof. Dr. Dieter Schmeisser
Angewandte Physik-Sensorik
Brandenburgische Technische Universitaet
03046 - Cottbus, Germany
Phone Within Germany: 0355-69-3073
From Outside: 0049-355-693073
E-mail:[email protected]
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Prof. Chacko Jacob
Materials Science Centre
Indian Institute Of Technology
Kharagpur - 721302 (W. B.) - INDIA
Phone Within India: 03222-28-3964
From Outside: +91-3222-28-3964
E-mail:[email protected]
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