In this work, growth and characterization of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been carried out. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100�C and 1150�C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively.

The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the graphite-like carbon at the SiO₂/SiC interface. Clean, graphite-free SiO₂ has been successfully grown on 3C-SiC by silicon evaporation and subsequent UHV anneal. For the application of high-k Pr₂O₃ on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO₂ and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr₂O₃ and SiC, and simultaneously provide higher band offsets.