| EC-428 VLSI DESIGN AND TECHNOLOGY (B.Tech 8th Semester, 2063) Time : 3 Hours Maximum Marks : 60 NOTE:- This paper consist of Three Sections. Section A is compulsory. Do any Four questions from Section B and any two questions from Section C Section-A Marks : 20 1 (a) Differentiate between monolithic and hybrid Ic's. (b) Define sheet resistance. (c) What is electromigration ? (d) Why do we need scaling ? (e) What is metallization process ? (f) What is thermal oxidation ? (g) What is substitutional diffusion ? (h) What are the materials used for thick film subtrate ? (i) Why do we use stick diagram for any layout design ? (j) What are the advantages of using E-beam masks ? Section-B Marks:5 Each 2. Discuss parasitic effects involved in monolithic transistor structure. 3. Explain, how isolation is achieved between MOS devices. 4. Discuss cMOS inverter transfer characteristics. 5. Explain, what are pinched resistors ? How do diffuse resistors differ from MOS resistors ? 6. How CMOS fabrication is done ? Explain only one process. Section-C Marks : 10 Each 7. Wht is pass transistor logic ? Show that pull-up to pull-down ratio for an n-MOS inverter driven through one or more pass transistor is 8 : 1. 8. What is ion implantation ? Explain an ion implantation system and give its properties. How annealing is done after ion implantation ? Mention advantages of ion implantation. 9. Explain the steps ( with diagrams ) involved in the fabrication of bipolar Ic process. What is buried layer diffusion ? |
| VLSI DESIGN |
| PAPER NO.3 |
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| PUT ON JUNE, 2K3 |