| Ec-428 VLSI Design and Technology (B.Tech 8th Semester, 2122) Time : 3 Hours Maximum Marks : 60 NOTE:- This paper consist of Three Sections. Section A is compulsory. Do any Four questions from Section B and any two questions from Section C Section-A Marks : 20 1 Explain the following: (a) Difference between Thin and Thick film. (b) Effect of parastics in Ic's. (c) Why Silicon is preferred for manufacturing IC's ? (d) Single Crystal Growth (e) Effect of Silicon dioxide layer on Silicon (f) causes of propagation delays in Ic's. (g) Effect of wiring capacitance in Ic's. (h) Difference between NMOS and PMOS. (i) Ion Implantataion (j) Device Miniaturization Section-B Marks:5 Each 2. Define Flick's law of diffusion. Discuss the various parameters and properties of diffusion process. 3. Distinguish between monolithic and hybrid integrated circuits. What are their relative merits and demerits ? 4. What are the complementary MOS devices ? Explain how P and n-channel enhancement MOS devices are grown on the same chip. 5. Discuss the following: Plasma etching, choice of photo resist and Stick diagrams. 6. Describe different methods which are employed to provide electrical isolation between components of a monolithic Ic. Section-C Marks : 10 Each 7. What are the basic processes of fabricating monolithic integrated transistor ? Draw the impurity profiles of the transistors produced by these processes and discuss their relative merits and demerits. 8.(a) What are various paprasitic effects involved while fabricating Ic transistor and resistors? How the parastic effects are avoided ? (b) Discuss the Masking and Etching technique. 9. Write notes on any two of the following: (a) cMOS Inverter (b) Thin film capacitors (c) Basic diode connections of Ic transistors (d) IC interconnections |
| VLSI Design and Technology |
| PAPER NO.2 |
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| PUT ON DEC, 2K2 |