| VLSI DESIGN AND TECHNOLOGY |
| PAPER NO. 1 |
 |
 |
 |
|
|
EC-428 VLSI DESIGN AND TECHNOLOGY (B.Tech 8th Semester,2052) Time : 3 Hours Maximum Marks : 60 NOTE:- This paper consist of Three Sections. Section A is compulsory. Do any Four questions from Section B and any two questions from Section C Section-A Marks : 20 1 Explain the following: (a) What do you mean by VLSI? (b) Why ICs are made from Silicon and not Germanium? (c) Layout consideration (d) Metalization (e) Photolithography (f) Metalization (g) Thin film and thick film technology. (h) Polysilicon gate technology (i) Computer aids (j) Ion-implantation Section-B Marks:5 Each 2. Expalin how MOS and CMOS fields effect transistors are fabricated in integrated circuits. 3. Explain the Masking and Etching Techniques. 4. Explain how diffused resistors and thin film resistors are fabricated in ICs. Also give the range of the values so obtained. 5. Discuss the following: Choise of Photoresists and Plasma Etching 6. Comapre MOSPHET with BJT as IC component. Also discuss the MOS isolation techniques. Section-C Marks : 10 Each 7. Summary the relative merits and demerits of basis diode connections of the integrated Circuits Transistor. 8. (a) Discuss the fabrication of IC capacitors along with the range of their values. (b) How do you avoid the parasitic effects associated with the resistor in an IC? 9. Write notes on any two of the following : (a) Monolithic Vs. Hybrid ICs (b) CMOS process sequence (c) Propagation delay and effect of writing capacitance. (d) IC Encapsulation. |