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(chronologically reversed)

2002(Sept)�Present:

Graduate student at Paul drude Institute and Humboldt-Universit�t zu Berlin, Berlin, Germany.

Ph.D. Specialization: Experimental condensed matter physics,

Dissertation: Ferromagnetic thin films of Fe and Fe3Si films on low-symmetric GaAs(113)A substrates (electronic copy available on request).

Advisor: Prof. Dr. Klaus. H. Ploog

Projected Graduation Date: Dec 2005, (thesis submitted)

My PhD thesis is a part of the Humboldt graduate school onFundamentals and functionality of size and interface controlled materials: spin-and optoelectronics

Also see the non-official page at:

http://www.physik.hu-berlin.de/~pomraenk/graduate/index

2002(Jan)�2002(Aug):

Junior research fellow in the department of Physics, Indian Institute of Technology (I.I.T) Kharagpur. 

2000(July)2002(Jan):

 M.Tech (Master of Technology) in Materials Science and Engineering with semiconductor technology as specialization from Indian Institute of Technology (I.I.T) Kharagpur, India.

Courses: Optoelectronics Materials and devices, Semiconductor devices and Modelling, Crystal Growth and Characterization, Semiconductor Technology, Thin Film Technology, CAD for VLSI

Project: �Study of Silicon carbide based Schottky junctions for hydrogen Gas sensor applications�

Duration: 8 months

Supervisors: Prof S Basu and Dr C Jacob

Over all GPA: 8.84/10

1998(July)2000(July):

M.Sc (Master of Science) in Physics with Electronics and Instrumentation as Specialization from Utkal University, Bhubaneswar, Orissa, India.  

Courses: Solid state physics, Quantum mechanics (Basic and Advanced), Electrodynamics, Electronics, Classical Mechanics, Optics (physical and geometrical), Mathematical methods, Nuclear and atomic physics.

Marks obtained: 74 %, Rank: Six (In the University) 

1995(July)-1998(July): 

B.Sc (Bachelor of Science) in Physics as Honors from Sambalpur University, Sambalpur, Orissa, India.  

Marks obtained: 71.625% Rank: Six (In the University, Out of around 2000 students)

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Scholarships and Achievements

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Research Experience

The present research leading to PhD involves the growth and properties of ferromagnets on semiconductor substrates. The work deals with three important aspects: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe3Si films on low-symmetric GaAs(113)A substrates. These two ferromagnetic metals, namely Fe and Fe3Si have cubic crystal structure and exhibit a close lattice match with GaAs. This allows to stabilize the [113]-orientation of the films on GaAs(113)A by using molecular-beam epitaxy (MBE). The structural properties of the Fe and Fe3Si films are studied using techniques such as reflection high-energy electron diffraction (RHEED), high-resolution X-ray diffraction (HXRD), X-Ray Reflectivity (XRR), and Atomic force microscopy (AFM). The magnetic properties are studied by in-situ Magneto-optical Kerr effect, SQUID magnetometry, and different magnetotrantranport techniques such as anisotropic magnetoresistance, planar Hall effect (PHE) and anomalous Hall effect.  The basic achievements of this work include the following: (i) establishment of the growth of Fe and Fe3Si on the high-index surface of GaAs(113)A substrates by MBE, (ii) study of the magnetic properties on the low-symmetric surface, which also provide the understanding to the incompletely understood uniaxial magnetic anisotropy (UMA) of Fe/GaAs system, (iii) substantiate correlation between structural and magnetic properties, and (iv) an important finding of an antisymmetric component in the PHE due to the reduced symmetry of the [113] orientation, (v) development of a phenomenological model based on the symmetry of the crystal  to understood the understand the observation of the antisymmetric component in PHE. The antisymmetric component in PHE is a completely new observation and to our knowledge is a first observation of the second-order Hall effect.

For details of the present research activity please see the research page and Publications

Previous Research Experiences:

1) Master of Technology ( M.Tech): Project on �Study of Silicon carbide based Schottky junctions for hydrogen Gas sensor applications�

Duration: 8 months

Supervisors: Prof S Basu and Dr C Jacob

During this project work, polycrystalline and bulk 3C-SiC samples were used to fabricate Ru/3C-SiC Schottky junctions for hydrogen gas sensor applications. The deposition of Ru was performed in e-beam evaporator and preliminary structural properties were characterized with XRD, resistivity, and Hall effect measurements. A homemade senor set-up was used to perform preliminary studies on the sensor properties of the Schottky junctions. An increase in diode current was observed with H2 concentration. Sensitivity was found to increase with biasing voltage. More details can be found in the above thesis.

Part of this work was also presented at the 9th International meeting on chemical sensors, Boston, USA, S Basu, S Roy, P K Muduli, C Jacob, A K Tyagi, High Temperature Hydrogen Sensors based on 3C-SiC Bulk and epilayer

2) M.Sc Summer project on �Plasma Paste Boronizing of stainless steel: A novel technique to improve hardness of metal surface� See the annual publication in Blossom here

This was my first experience in a real experimental environment. I got flavor of some plasma processing techniques. Also some preliminary studies of surface hardness was performed.

 Duration: 1.5 months

Seminars delivered

During Ph.D:

  • An overview of MOKE and SQUID magnetic measurement Techniques Zip Archive (264K)
  • Taking spin into account [PDF]
  • An introduction to programming in Origin html
  • Growth and Magnetic properties of Fe on GaAs (311)A substrates: PDF
  • Growth, structure and magnetism of Fe and Fe3Si films on GaAs(113)A substrates. [PDF]

During M.Tech:

  •  �Growth and Characterization of Si1-x-yGex Cy epilayer on Si substrates�

  • �A Ferroelectric memory field effect transistor (FEMFET) using Metal/PZT/MgO/SiO2 structure�

  • �Blue GaN-InGaN MQW LED on Silicon Substrate�

  • �An Overview of Silicon Carbide Technology�

Experimental Skills:

Samples preparation

  • Growth of magnetic thin films and preparation of III-V semiconductor surfaces by molecular-beam Epitaxy***

  • Growth of metals on SiC by e-beam evaporation**

Structural characterization

  • Reflection high-energy electron diffraction***

  • High resolution X - Ray Diffraction (HXRD) and X-Ray Reflectivity (XRR) with PANalytical high-resolution diffractometer, High-resolution Bede Diffractometer and a Home made XRD system***

  • Atomic force microscopy (Park scientific and digital instruments nanoscope) ***

  • Scanning Electron Microscopy*

Magnetic Characterization

  • SQUID magnetometry with MPMS XL***

  • Magneto-optical Kerr effect**

  • Magnetotrantranport and Hall effect (anamolous) ***

  • Magnetic force Microscopy*

(* indicates level of experience, 3 * for highest)

Other Skills:

 Computer Knowledge:

  • Programming Languages: C, FORTRAN, VHDL

  • Operating Systems: Windows, Linux, Unix 

  •  Software expertise: Latex, MS Office, Origin (with knowledge of programming),  Igor Pro (with knowledge of programming), Mathmatica, MATLAB, Crystal drawing programs such a Diamond, Several X-ray simulation Softwares, little knowledge of VLSI Design TOOLS such as circuit simulation by Win- SPICE, T-SPICE and Digital Logic synthesis using SYNOPSYS

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Personal Details

Nationality: INDIAN

Date of Birth: 01-11-1978

Place of birth: Orissa, India

Sex: Male

Marital status: Single

Personal Address:

Paul-Drude-Institute for Solid State Electronics , Hausvogteiplatz 5-7, 10117 Berlin, Germany
Tel: 0049-30-20377-364,362 (Office, Lab), Fax: 0049-(0)30-20377-201, Mobile: 0049-1797675814, 0049-30-25019329
Email:
[email protected]/[email protected]

Home Address:

Apartment No:61502, LynarStr.5, 13353, Berlin, Germany, Mobile: 0049-1797675814, 0049-30-25019329

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Last updated 10/10/2005

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Pranaba Kishor Muduli
Paul-Drude-Institute for Solid State Electronics , Hausvogteiplatz 5-7, 10117 Berlin, Germany
Tel: 0049-30-20377-364,362 (Office, Lab), Fax: 0049-(0)30-20377-201, Mobile: 0049-1797675814, 0049-30-25019329
 Email: [email protected]/[email protected]

 
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