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(chronologically reversed)
2002(Sept)�Present:
Graduate student at
Paul drude Institute and
Humboldt-Universit�t zu Berlin,
Berlin, Germany.
Ph.D.
Specialization:
Experimental condensed matter physics,
Dissertation:
Ferromagnetic thin films of Fe and Fe3Si films on low-symmetric
GaAs(113)A substrates (electronic copy available on request).
Advisor:
Prof. Dr. Klaus. H. Ploog
Projected Graduation
Date:
Dec 2005, (thesis submitted)
My PhD
thesis is a part of the
Humboldt graduate
school on
�Fundamentals
and functionality of size and interface controlled materials: spin-and
optoelectronics�
Also see the
non-official page at:
http://www.physik.hu-berlin.de/~pomraenk/graduate/index
2002(Jan)�2002(Aug):
Junior
research fellow in the department of Physics,
Indian Institute of Technology (I.I.T) Kharagpur.
2000(July)�2002(Jan):
M.Tech (Master of Technology) in
Materials Science and Engineering with semiconductor technology as
specialization from
Indian Institute of Technology (I.I.T) Kharagpur,
India.
Courses:
Optoelectronics Materials and devices, Semiconductor devices and Modelling,
Crystal Growth and Characterization, Semiconductor Technology, Thin Film
Technology, CAD for VLSI
Project:
�Study of Silicon carbide based Schottky junctions for hydrogen Gas sensor
applications�
Duration: 8
months
Supervisors: Prof
S Basu and Dr C Jacob
Over all GPA: 8.84/10
1998(July)�2000(July):
M.Sc (Master of
Science) in Physics with Electronics and Instrumentation as Specialization from
Utkal University, Bhubaneswar, Orissa, India.
Courses: Solid state physics,
Quantum mechanics (Basic and Advanced), Electrodynamics, Electronics, Classical
Mechanics, Optics (physical and geometrical), Mathematical methods, Nuclear and
atomic physics.
Marks obtained: 74 %, Rank: Six (In
the University)
1995(July)-1998(July):
B.Sc (Bachelor
of Science) in Physics as Honors from Sambalpur University, Sambalpur, Orissa,
India.
Marks obtained: 71.625% Rank: Six
(In the University, Out of around 2000 students)
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Scholarships and Achievements |
-
Doctoral fellowship granted by the
Paul-Drude-Insitute for Solid State Electronics,
Berlin, Germany
- Postgraduate
scholarship during M.Tech at
IIT Kharagpur, Govt. Of India
- Qualified the
prestigious national level examination,
Graduate Aptitude Test For engineering (GATE)-2000
with 97.84 percentile, All India Rank: 34 (out of 1600 students
appeared)
- Qualified
CSIR �NET JRF (Junior Research
Fellowship in Physics) held during June 2000. I was among top 30 students in
the National eligibility Test (NET), Approximately 9000 students appeared in
this national test.
- Ranked 6th
in Master of Science (Physics), from
Utkal University, India ,1998-2000.
-
National Scholarship by Government of India,
for securing 6th rank (out of around 2000 students) in Bachelor of Science (B.Sc)
with Physics.
- Qualified
TOFEL (Test of English as a Foreign
Language)-2002 with a score of 233/300
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Research Experience
The present research leading to PhD
involves the growth and properties of ferromagnets on semiconductor substrates.
The work
deals with three important aspects: (i) growth and structural
characterization, (ii) magnetic properties, and (iii) magnetotransport
properties of Fe and Fe3Si films on low-symmetric GaAs(113)A
substrates. These two ferromagnetic metals, namely Fe and Fe3Si have
cubic crystal structure and exhibit a close lattice match with GaAs. This allows
to stabilize the [113]-orientation of the films on GaAs(113)A by using
molecular-beam epitaxy (MBE).
The
structural properties of the Fe and
Fe3Si
films
are studied using techniques such as
reflection high-energy electron diffraction
(RHEED),
high-resolution X-ray
diffraction (HXRD),
X-Ray Reflectivity (XRR),
and
Atomic force microscopy
(AFM). The magnetic properties are studied by in-situ
Magneto-optical Kerr effect,
SQUID magnetometry, and different magnetotrantranport
techniques such as anisotropic magnetoresistance, planar Hall effect (PHE)
and anomalous Hall effect.
The basic achievements of this work include the following: (i) establishment of
the growth of Fe and Fe3Si
on the high-index surface of GaAs(113)A substrates by MBE, (ii) study of the
magnetic properties on the low-symmetric surface, which also provide the
understanding to the incompletely understood uniaxial magnetic anisotropy (UMA)
of Fe/GaAs system, (iii) substantiate correlation between structural and
magnetic properties, and (iv) an important finding of an antisymmetric component
in the PHE due to the reduced symmetry of the [113] orientation, (v) development
of a phenomenological model based on the symmetry of the crystal to understood
the understand the observation of the antisymmetric component in PHE. The
antisymmetric component in PHE is a completely new observation and to our
knowledge is a first observation of the second-order Hall effect.
For details of the present research activity please see the
research page and
Publications
Previous Research
Experiences:
1)
Master of Technology (
M.Tech): Project on
�Study of Silicon carbide based Schottky junctions for hydrogen
Gas sensor applications�
Duration: 8 months
Supervisors: Prof S Basu and Dr C Jacob
During this project
work, polycrystalline and bulk 3C-SiC samples were used to fabricate Ru/3C-SiC
Schottky junctions for hydrogen gas sensor applications. The deposition of Ru
was performed in e-beam evaporator and preliminary structural properties were
characterized with XRD, resistivity, and Hall effect measurements. A homemade
senor set-up was used to perform preliminary studies on the sensor properties of
the Schottky junctions. An increase in diode current was observed with H2
concentration. Sensitivity was found to increase with biasing voltage. More
details can be found in the above thesis.
Part of this work
was also presented at the 9th International meeting on
chemical sensors, Boston, USA, S Basu, S Roy, P K Muduli, C Jacob, A K Tyagi,
High Temperature Hydrogen Sensors based on 3C-SiC Bulk
and epilayer
2) M.Sc Summer project on �Plasma
Paste Boronizing of stainless steel: A novel technique to improve hardness of
metal surface� See the annual publication in Blossom
here
This was
my first experience in a real experimental environment. I got flavor of some
plasma processing techniques. Also some preliminary studies of surface hardness
was performed.
Duration: 1.5 months
Seminars delivered
During Ph.D:
-
An overview of
MOKE and SQUID magnetic measurement Techniques
Zip Archive
(264K)
-
Taking spin into
account
[PDF]

-
An introduction to programming in Origin
html
-
Growth and Magnetic properties of Fe on GaAs (311)A substrates:
PDF

-
Growth, structure
and magnetism of Fe and Fe3Si films on GaAs(113)A
substrates.
[PDF]
During M.Tech:
-
�Growth
and Characterization of Si1-x-yGex
Cy epilayer on
Si substrates�
-
�A Ferroelectric memory field effect
transistor (FEMFET) using Metal/PZT/MgO/SiO2 structure�
-
�Blue GaN-InGaN MQW LED on Silicon
Substrate�
-
�An Overview of Silicon Carbide
Technology�
Experimental
Skills:
Samples
preparation
Structural characterization
-
Reflection high-energy electron diffraction***
-
High
resolution X - Ray Diffraction (HXRD) and
X-Ray Reflectivity (XRR)
with PANalytical
high-resolution diffractometer,
High-resolution Bede Diffractometer and a Home made XRD system***
-
Atomic force microscopy (Park scientific and digital instruments nanoscope)
***
-
Scanning Electron Microscopy*
Magnetic
Characterization
-
SQUID
magnetometry with MPMS XL***
-
Magneto-optical Kerr effect**
-
Magnetotrantranport and Hall effect (anamolous) ***
-
Magnetic force Microscopy*
(*
indicates level of experience, 3 * for highest)
Other Skills:
Computer
Knowledge:
-
Programming
Languages: C, FORTRAN, VHDL
-
Operating Systems: Windows, Linux, Unix
-
Software
expertise: Latex, MS Office, Origin (with knowledge of programming), Igor Pro
(with knowledge of programming), Mathmatica, MATLAB, Crystal drawing programs
such a Diamond, Several X-ray simulation Softwares, little knowledge of VLSI
Design TOOLS such as circuit simulation by Win- SPICE, T-SPICE and Digital
Logic synthesis using SYNOPSYS
To
the Top |
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Personal Details |
|
Nationality:
INDIAN
Date of Birth:
01-11-1978
Place of birth:
Orissa, India
Sex: Male
Marital status:
Single
Personal Address:
Paul-Drude-Institute for Solid State Electronics , Hausvogteiplatz 5-7, 10117
Berlin, Germany
Tel: 0049-30-20377-364,362 (Office, Lab), Fax: 0049-(0)30-20377-201, Mobile:
0049-1797675814, 0049-30-25019329
Email:
[email protected]/[email protected]
Home Address:
Apartment
No:61502, LynarStr.5, 13353, Berlin, Germany, Mobile:
0049-1797675814, 0049-30-25019329
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| Last
updated
10/10/2005 |
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