Division for Technologies and Materials of Sensor Engineering
The Department for Semiconductor Heterostructures
Laboratory of Radiospectroscopy
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FKZ: VOLKSWAGENWERKERS:1993-1995
FKZ: 01 M 2971 Germany Minister for Education, Science, Research and Technology (BMBF),from Deutsche Forschungsgemeinschaft, "Point defects in SiC" (1996-1998)
Partner projects funded by European Office of Aerospace Research and Development (EOARD), USA:
1. Project SPC - 94-4085 "Growth and Characterization of Bulk Silicon Carbide for Electronics, Microwave Applications and Optical Application", 1995
2. Project SPC - 97-4051 "EPR and Electrical Investigations of Point defects and Hopping Motion in SiC heavily Doped with nitrogen" 1997,
3. Project SPC - 98-4055" ESR Spectra of Residual Donors Inherent n-type bulk 6H SiC", 1998
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INTAS �  96-2131 "Growth and Characterization of Bulk Gallium Nitride Crystals" (1997-1999)
STCU project #1056 "Elaboration and application of D-band solid state microwave components to the high resolution electron spin resonance (ESR) systems and design of experimental ESR spectrometer for the investigations of semiconductor materials� (2000-2002)
Partner project
EOARD, STCU#P092 �Photo EPR study of trapping and recombination processes in semi-insulating 4H, 6H SiC crystals over a wide temperature interval� (2002-2004)
INTAS �  03-51-3747 "High Field multifrequency EPR and ODEPR study of the deep intrinsic defects in semi-insulating 6H and 4H SiC material" (2004-2006)
Partner
STCU project # P236 funded by University of Stuttgart, Institute of Physical Chemistry "Elaboration of a pulse microwave bridge for a Q-band Electron Spin-Echo Spectrometer" (2005-2006)
DFG project: GZ 436 UKR, "ESE and pulsed ENDOR study of the defect formation mechanism in n-type 4H SiC wafers with deviation in stoichiometry" (2006)
CRDF # UKE2-2856 "Research and Development of Amorphous SiXC1-X:H and Rare-Earth Doped Amorphous SiXC1-X:H films on Crystalline Si for Light-Emitting Devices" (2007-2009)-current
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