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| Division for Technologies and Materials of Sensor Engineering The Department for Semiconductor Heterostructures |
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| Laboratory of Radiospectroscopy | ||||||||||||||||||||||||||||||
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| The laboratory of radiospectroscopy of the Institute of Semiconductor Physics has been involved for more than fifteen years in the investigation of semiconductor materials by high resolution magnetic resonance technique providing analysis of semiconductor materials (monocrystal, porous, amorphous) and evaluating low defect concentrations with high spatial resolution. Last five years the activity of the group is devoted to the investigation of the deep levels responsible for the semi-insulating features of SiC materials grown under different conditions by multiple magnetic resonance methods. Novel activity of the group is devoted to the investigation of the material perspective for orthopedic and dental implants, particularly, hydroxyapatites, biomorphous silicon carbide ceramic by high resolution EPR methods. |
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| The laboratory has also experience working (for 10 years) in elaboration and adjustment of the microwave equipment for EPR spectrometers including: | ||||||||||||||||||||||||||||||
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| cw and pulse microwave bridge with operation frequency of 37 GHz cw microwave bridge with operation frequency of 140 GHz cavities with different quality operating in the frequency range of 35-37 GHz |
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| The laboratory is interesting in cooperation with the material science laboratory producing silicon carbide: monocrystals porous material amorphous material whiskers, biomorphous ceramic material And also to perform the joint project in characterization of the materials. |
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| The laboratory proposes the cooperation with the radiospectroscopy laboratories that are interesting in elaboration and design of microwave equipment for CW EPR ad Electron Spin Echo (ESE) spectrometers | ||||||||||||||||||||||||||||||