EC-302
                                    Microwave Engineering
                             (B.Tech 6th & 7th Semester, 2063)
Time : 3 Hours                                                                                  Maximum Marks : 60
NOTE:-
This paper consist of Three Sections. Section A is compulsory. Do any Four questions from
                 Section B and any two questions from Section C


                                   Section-A                                       Marks : 20

1 (a) What is back heating in tubes at microwave frequencies ?
  (b) List various methods of beam focusing in TWT's.
  (c) What is velocity modulation ?
  (d) What is current modulation ?
  (e) Why is tunnel diode loosely coupled to its cavity ?
  (f) What is the main idea behind obtaining -ve Resistance in a Gunn diode ?
  (g) List the biggest disadvantages of IMPATT diode.
  (h) What happens to the performance of PIN diode above 100 MHz ?
  (i) Why circular waveguides are preffered over rectangular waveguides in some applications ?
  (j) Why van TEM waves not be propagated in waveguides ?

                                           
Section-B                                       Marks:5 Each

2. Discuss probelms of transmit time effect in tubes at microwave frequencies.
3. Why stopping is needed in case of travelling  wave magnitron ?
4. Discuss the applicaion of PIN diode as a modulator.
5. What is S-matrix ? Discuss properties of S-matrix.
6. A rectangular waveguide is 4.1 by 1.8 cm. Calculate the cut-off frequency of the dominant mode. Also
   determine a mode closest to the dominant mode.

                                            
Section-C                                      Marks : 10 Each

7. Discuss the operation of Travelling wave magnetron for pi-mode in detail and also discuss its applications.
8. What are the directional coupler ? Discuss the principle of operation and application of a two pole directional coupler.
9. Discuss Miscowave Bipolar Transistor and FETs ? Also discuss the high frequency limitations of Bipolar Transistors.
MIROWAVE ENGINEERING
PAPER NO.3          
PREVEOUS       1 2 3 4        NEXT
[email protected]
[email protected]
[email protected]
ECE        CSE          EIE          FIRST YEAR PAPERS             SECOND YEAR PAPERS              THIRD YEAR PAPERS
Hosted by www.Geocities.ws

1