2008
20. "Optical absorption spectra of doped and codoped Si nanocrystallites",
L.E.
Ramos, E. Degoli, G. Cantelle, S. Ossicini, D. Ninno, J.
Furthmüller, and F. Bechstedt,
Phys. Rev. B 78,
235310 (2008).
[abstract][postscript][pdf]
19.
"Optical spectra of Si
nanocrystallites: Bethe-Salpeter approach versus time-dependent
density-functional theory",
L.E. Ramos, J.
Paier, G. Kresse, and F. Bechstedt,
Phys. Rev. B 78, 195423
(2008).
[abstract][postscript][pdf]
2007
18. "Structural features and electronic properties of group-III, group-IV, and group-V doped Si nanocrystallites",
L.E.
Ramos, E. Degoli, G. Cantelle, S. Ossicini, D. Ninno, J.
Furthmüller, and F. Bechstedt,
J.Phys. C: Condens. Matt. 19,
466211 (2007).
[abstract][postscript][pdf]
17. "Theoretical study of
the chemical gap tuning in silicon nanowires",
B.
Aradi, L.E. Ramos, P. Deák, Th. Köhler, F.
Bechstedt, R.Q. Zhang, and Th. Frauenheim,
Phys. Rev. B 76,
035305 (2007).
[abstract][postscript][pdf]
2006
16. "Highly luminescent
nanocrystal quantum dots fabricated by lattice-type mismatched
epitaxy",
W. Heiss, E. Kaufmann, M. Boeberl, T.
Schwarzl, G. Springholz, G. Hesser, F. Schaeffler, K. Koike, H.
Harada, M. Yano, R. Leitsmann, L.E. Ramos, F.
Bechstedt,
Physica E 35, 241
(2006),
[abstract][postscript][pdf]
15. "Rebonding at
coherent interfaces between rocksalt-PbTe/zinc-blende-CdTe",
R.
Leitsmann, L.E. Ramos, F. Bechstedt, H. Groiss, F. Schäffler,
W. Heiss, Kazuto Koike, Hirashi Harada, and Mitsuaki Yano,
New
Journal of Physics 8, 317 (2006).
[abstract][postscript][pdf]
14. "Structural
properties of PbTe/CdTe interfaces from first principles",
R.
Leitsmann, L.E. Ramos, and F. Bechstedt,
Phys. Rev. B 74,
085309 (2006).
[abstract][postscript][pdf]
2005![]()
13. "Optical
properties of Si and Ge nanocrystals: Parameter-free
calculations",
L.E. Ramos, H.-Ch.
Weissker, F. Bechstedt, and J. Furthmüller,
phys. stat. sol.
(b) 242, 3053 (2005).
[abstract][postscript][pdf]
12. "Influence of Oxygen
on Optical Properties of Si Nanocrystallites",
L.E.
Ramos, J. Furthmüller, and F. Bechstedt,
Appl. Phys.
Lett. 87, 143113 (2005).
[abstract][postscript][pdf]
11.
"Quantum confinement in Si- and
Ge-capped nanocrystallites",
L.E. Ramos, J.
Furthmüller, and F. Bechstedt,
Phys. Rev. B 72,
045351 (2005).
[abstract][postscript][pdf]
10.
"Reduced influence of defects on
oxidized Si nanocrystallites",
L.E. Ramos,
J. Furthmüller, and F. Bechstedt,
Phys. Rev. B 71,
035328 (2005).
[abstract][postscript][pdf]
2004
9. "Effect
of backbond oxidation on silicon nanocrystallites",
L.E.
Ramos, J. Furthmüller, and F. Bechstedt,
Phys. Rev. B 70,
033311 (2004).
[abstract][postscript][pdf]
8. "Quasiparticle band
structures and optical spectra of beta-cristobalite SiO2",
L.E.
Ramos, J. Furthmüller, and F. Bechstedt,
Phys. Rev. B 69,
085102 (2004).
[abstract][postscript][pdf]
2003
7. "Group-IV and group-V
substitutional impurities in cubic group-III nitrides",
L.E.
Ramos, J. Furthmüller, J.R. Leite, L.M.R. Scolfaro, and F.
Bechstedt,
Phys. Rev. B 68, 085209
(2003).
[abstract][postscript][pdf]
2002
6. "Substitutional carbon
in group-III nitrides: ab initio description of shallow and
deep levels",
L.E. Ramos, J. Furthmüller,
L.M.R. Scolfaro, J.R. Leite, and F. Bechstedt,
Phys. Rev. B 66,
075209 (2002).
[abstract][postscript][pdf]
5. "Carbon-based defects in
GaN: doping behaviour",
L.E. Ramos, J.
Furthmüller, J.R. Leite, L.M.R. Scolfaro, and F. Bechstedt,
phys. stat. sol. (b) 234, 864 (2002).
[abstract][postscript][pdf]
2001
4. "Structural,
electronic, and effective-mass properties of silicon and zinc-blende
group-III nitride semiconductor compounds",
L.E.
Ramos, L.K. Teles, L.M.R. Scolfaro, J.L.P. Castineira, A.L. Rosa,
and J.R. Leite,
Phys. Rev. B 63, 165210 (2001).
[abstract][postscript][pdf]
3. "Ab
initio theory of native defects in alloys: application to charged
N vacancies in Alx Ga1-xN alloys",
L.E. Ramos, J. Furthmüller, F. Bechstedt, L.M.R.
Scolfaro, and J.R. Leite,
J. Phys. C: Condens. Matt. 14,
2577 (2001).
[abstract][postscript][pdf]
1997-2000
2. "Relaxation effects on
the negatively charged Mg impurity in zincblende GaN",
L.K. Teles, L.M.R. Scolfaro, J.R. Leite, L.E. Ramos, A.
Tabata, J.L.P. Castineira, and D.J. As,
phys. stat. sol. (b) 216,
541 (1999).
[abstract][postscript][pdf]
1. "Minibands of p-type
delta-doping superlattices in GaAs",
L.E.
Ramos, G.M. Sipahi, L.M.R. Scolfaro, R. Enderlein, and J.R. Leite
,
Superlattices and Microstructures 22, 443 (1997).
[abstract][postscript][pdf]
Last update 22.12.2008