"Minibands of p-type delta-doping
superlattices in GaAs",
L.E. Ramos, G.M. Sipahi, L.M.R. Scolfaro, R.
Enderlein, and J.R. Leite
Superlattices and Microstructures 22
, 443 (1997).
The minibands of p-type delta-doping superlattices (SLs)
in GaAs are studied in dependence on acceptor sheet doping concentrations
N_A and SL periods d. The calculations rely on effective mass theory, applied
to the Gamma_8 valence band hole gas. Hole-hole interaction is self-consistently
taken into account, including the exchange-correlation which is considered
in the local density approximation. The miniband edges of the various heavy
and light hole bands, the Fermi level, and the potential well barriers and
bottoms are plotted against N_A with d as parameter and against d with N_A
as parameter. In this way, we provide complete band structure information
for optical and transport measurements on p-type delta-doping superlattices.