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Problems XII
- The graph of the product of collector-emitter voltage (VCE) & collector current (IC) in the transistor characteristic curve?
- When the transistor is saturated VCE is approximatley equal to _____?
- The resistance between collector & emitter when an ideal transistor is at cut-off ____?
- The leakage current that flows at the collector-base junction when the emitter is open _____?
- A transistor with b = 100 connected as common base was found to have a leakage current ICBO = 1 mA. If the said transistor is configured as common emitter, what is its ICEO?
- The ratio of the collector current to the base current at a particular quiescent point?
- ICBO of an ideal transistor?
- The maximum voltage that can be applied across the collector-emitter terminal for a given transistor is specified _____?
- A transistor is operated at 100 MHz & has a current-gain bandwidth product of 250 MHz. What is the effective current gain hfe?
- Bipolar junction transistor is considered as a bipolar device due to the fact that both holes & electron flow during its operation. For FET only one carrier is involved & is therefore called a unipolar device. The carrier used in FET is _____?
- One obvious advantage of FET over BJT is its _____?
- A BJT is a current- controlled current source device while a JFET is a _____?
- In a FET the D, S & G terminal corresponds to _____ of the BJT?
- The factor that gives the FET a high input resistance _____?
- Which type of FET has the lowest input resistance?
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