Problems XIII
- What type of insulator used in a MOSFET?
- The depletion region between the p-n junction of a FET will _____ when it increases?
- A type of FET which has no channel when VGS = 0V?
- Usually the substrate is connected to _____?
- In an n-channel enhancement type MOSFET the gate voltage should be _____ with respect to the source in order to produce or enhance a channel?
- The voltage across gate-source terminal of a JFET that can cause drain current ID equal to zero?
- For BJT amplifier the external emitter resistor RE can greatly increase the input resistance of the amplifier, ideally what is the effect of the external soruce resisitance RS in a JFET amplifier to its input resistance?
- The graph of ID versus VDS with VGS as the parameter of a JFET is called _____?
- A depletion type MOSFET has a drain saturation current IDSS = 10mA and a pinch-off voltage Vp = 4V, what is the maximum transconductance gmo?
- The regions of a MOSFET that is highly doped?
- Transconductance of FET is defined as _____?
- The drain current (ID) of the enhancement type MOSFET is taken from the transfer characteristics and is defined as ID = k(VGS-DT)2. What is the typical value of k?
- What is the drain current ID for an n-channel enhancement MOSFET with a threshold voltage VT = 3V when VGS = 2V?
- Ideally there is no current flow into the gate terminal of FET that makes them suitable to be used as the _____ stage of a multistage amplifier?
- There are three lumped capacitors that exist in a FET that degrades its high frequency performance. These capacitors are Cgs, between the gate and the source, Cgd between the gate and the drain and Cds between the drain and the source. These capacitors are called?
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