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IMAGE imgs/statoptimization01.gif
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THRESHOLDVOLTAGE(Vt)VARIANCE

EXAMPLE-A CASESTUDY

Model:

IMAGE imgs/statoptimization68.gif IMAGE imgs/statoptimization69.gif

fms (Nd)

2 ff (Nd)

Vt

=

+

-

-

Co (tox)

Co (tox)

Where:

fms (Nd)

ff (Nd)

Qb (Nd)

Co (tox)

=

=

=

=

The metal-semiconductorwork function difference

The Fermi potential

The chargeperunit area inthesurface depletionregionat inversion

The gate oxidecapacitance per unitarea

IMAGE imgs/statoptimization65.gif

Process Factors:

Nd

=

=

=

Thedopingconcentrationin thechannel,

Thegateoxidethickness, and

Theoxide/interfacecharge perunitarea

tox

Qi

IMAGE imgs/statoptimization04.gif

*

Distributions obtainedfromCV plots oftest patterncapacitors

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