Hans
J. Queisser
has been a Professor and one of the
Directors of the Max-Planck Institute für Feskörperforschung
in Stuttgart before his recent retirement. He is a well known figure in
semiconductor science and recognized internationally for his research in
the field.
A. M. Stoneham
(FRS)
is currently the Director of the Centre
for Materials Research and Massey Professor of Physics in the Department
of Physics and Astronomy, University College, London. He is one
of the leading theoreticians in the field of semiconductor physics, having
served a distinguished career at the Atomic Energy Research Establishment,
Harwell, U. K.
Hermann G. Grimmeiss
retired after a long and distinguished
career as Professor of Solid State Physics at the University of Lund in
Sweden where he established a strong and well-known department on defect
studies in semiconductors. He is known for his pioneering work on GaP LEDs
among other important contributions.
Gordon Davies
is currently Professor of Physics
at King’s College London. He is highly regarded for his work on Diamond
as well as defect studies in Silicon using luminescence spectroscopy.
Koji Sumino
Is one of the distinguished Japanese
semiconductor scientist whose career spans many different areas. His work
on extended defects, in particular dislocations, in semiconductors has
attracted great deal of attraction world wide. After serving a distinguished
career at the Tohoku University in Sendai (Japan), where he established
an excellent centre on defect studies, he joined the Nippon Steel Corporation
as an Executive Director.
Zahid A. K. Durrani
and
Haroon Ahmed
both belong to the Microelectronics
Research Centre at the Cavendish Laboratory, Cambridge, U. K. Professor
Ahmed and his research group has made many major contributions to both
semiconductor science and technology. The recent important work of his
group includes novel fabrication/ processing technique for nanostructure
device fabrication and new quantum phenomena on nanometer scale. Single
electron transistor figures prominently among his recent work.
A. R. Peaker
and
J. H. Evans-Freeman
belong to the Department of Electrical
Engineering and Electronics at the University of Manchester Institute of
Science & Technology (UMIST) where Professor Peaker (popularly known
as Tony Peaker) is the Director of the Centre for Electronic Materials.
He led the Photon Devices team at Ferranti Electronics at Manchester prior
to joining the faculty at UMIST. He has made important contributions in
defects studies, primarily using electrical methods, on silicon as well
as compound semiconductors. His present research focuses on light emission
from Er-doped silicon. He and Dr. J. H. Evans-Freeman (head of the Silicon
Opto-Electronics Programme) are heavily committed to the realization of
a Si based laser source as would be evident from their article.
Jacques I. Pankove
Is very well known and highly regarded
for his many pioneering researches in semiconductor science and technology,
spanning over nearly half a century. He is undoubtedly one of the outstanding
figures of the 20th century semiconductor science. Recently
his 30 year old work on GaN has been enthusiastically celebrated. Having
served as a research scientist at RCA (now extinct) he served as a Professor
at the University of Colorado, Boulder where he is still a Professor Emeritus.
Currently he also heads a company named ‘Astralux, Inc.’
Nikolai Ledentsov
is a permanent member of the Ioffe
Institute group in St. Petersburg and
Dieter Bimberg
is professor and director of the Institute
of Solid State Physics at the Technical University Berlin. Both these groups
are very active in the field of growth and new properties of self-organized
quantum dot structures in III-V heterocrystals produced by MBE and MOCVD,
with many world firsts to their credit. The successful demonstration of
quantum dot lasers by both methods is the latest highlight of their contributions
in the field described in their article.
James D. Chadi
is currently working as a Senior Research
Scientist at the NEC Research Institute in New Jersey, after having served
a career at Xerox Palo Alto Research Centre in California. His specialty
of theoretical research in semiconductors is the Science of surfaces and
bulk defects which he likes to describe affectionately as ‘internal surfaces’.
The present article with his co-worker
S. Poykko
highlights some of their recent contributions
to the understanding of the Si(111)-surface.
A Publication of Pakistan Society for Semiconductor Science and Technology