1. Effect of Annealing and a-irradiation on Deep Levels in Silver-doped n-type Silicon.
    Akbar Ali, M. Zafar Iqbal and N. Baber,
    J. Appl. Phys. 77, 3315, (1995).

3. Study of the Alpha-irradiation and Thermal Annealing of Gold-doped n-type Silicon.
    Akbar Ali, M. Zafar Iqbal and N. Baber, 
    J. Appl. Phys. 77, 5572, (1995).

4. Influence of Al Doping on Deep Levels in MBE GaAs. 
    Umar S. Qurashi, M. Zafar Iqbal, N. Baber and T. G. Andersson, 
    Materials Science Forum 196-201, 1767, (1995).

5. Interaction of Iron Donor with Transition-metal Impurities in Silicon.
    Akbar Ali, M. Zafar Iqbal, N. Baber and Asghar A. Gill, 
    Materials Science Forum 196-201, 689, (1995).

6. Effects of Al Doping on Deep Levels in Molecular Beam Epitaxy GaAs.
    Umar S. Qurashi, M. Zafar Iqbal, N. Baber and T.G. Andersson, 
    J. Appl. Phys. 78, 5045, (1995).

7. Field Enhanced carrier Emission of Rh, Ru and Os Induced Deep Levels in InP.
    A. Dadgar, L. Kohne, M. Zafar Iqbal and D. Bimberg, 
    Proc. of 23rd International conference on the Physics of Semiconductors (Berlin 1996), ed. by 
   M. Scheffler and R. Zimmermann (World Scientific, Singapore), p. 2837, 1996.

8. Porous Silicon - An Overview.
    M. Zafar Iqbal, 
   The Nucleus, 33, 33, (1996).

9. Bleaching of the Interstitial Iron Donor in Silicon by Transition-Metal Impurities.
    Akbar Ali, M. Zafar Iqbal, N. Baber and Asghar A. Gill, 
    Semicond. Sci. Tech. 11, 129, (1996).

10. Photoluminescence Study of Al doping in GaAs Grown by Molecular-beam-epitaxy.
      Umar S. Qurashi, M. Zafar Iqbal and T.G. Andersson, 
      J. Appl. Phys. 80, 5932, (1996).

11. Deep Levels in Alpha-Irradiated Indium Phosphide.
      Aurangzeb Khan, Nasim Zafar and M. Zafar Iqbal, 
      Proceedings of International Workshop on Recent Developments in Condensed Matter Physics
      and Nuclear Science, Rajshahi, Bangladesh, 28 Oct. - 1 Nov. 1996. Ed. A. K. M. A. Islam, published
      by Physics Department Rajshahi University, Rajshahi, Bangladesh) Vol. 1, pp 131, 1997.

12. Basic Concepts and Characterization of Defects in Semiconductors. (Invited Paper).
      M. Zafar Iqbal, 
      Proceedings of International Workshop on Recent Developments in Condensed Matter Physics and 
      Nuclear Science, Rajshahi, Bangladesh, 28 Oct. - 1 Nov. 1996. Ed. A. K. M. A. Islam, published by
      Physics Department Rajshahi University, Rajshahi, Bangladesh Vol. 1, pp 41,  1997.

13. Photoluminescence and Defects in Semiconductors (Invited Paper).
      M. Zafar Iqbal, 
      Proceedings of International Workshop on Recent Developments in Condensed Matter Physics and 
      Nuclear Science, Rajshahi, Bangladesh, 28 Oct. - 1 Nov. 1996. Ed. A. K. M. A. Islam, published by 
      Physics Department Rajshahi University, Rajshahi, Bangladesh) Vol. 1, pp 53, 1997.

14. Photoluminescence Study of Dose and Dose Rate Dependence of Si Implanted GaAs.
      M. Kotani, M. Zafar Iqbal, Y. Makita, R. Morton and S. S. Lau, 
      Appl. Phys. Lett. 70, 3597, (1997).

15. Interaction of Iron with Transition Metals and Alpha Radiation in Thermally quenched p-Silicon 
      Akbar Ali, U. S. Qurashi, M. Zafar Iqbal and N.Zafar, 
      Semicond. Sci. Tech. 12, 1100, (1997).

16. Deep Levels in Nitrogen Doped MBE-grown p-type ZnSe
      U. S. Qurashi and M. Zafar Iqbal, 
      Semicond. Sci. Tech. 12, 1615, (1997).

17. Photoluminescence Study of Alpha-Irradiated MOCVD Grown n-InP.
       K. M. Khalid, Umar S. Qurashi, M. Zafar Iqbal and Nasim Zafar, 
       Proceedings of 5th International Symposium on Advanced Materials, Islamabad, Pakistan. p. 245,
      1997.

18. Electrical And Optical Deep Level Transient Spectoscopy of Radiation Induced Deep Levels in 
      MOCVD Grown p-InP.
      Aurangzeb Khan, Umar S. Qurashi, Nasim Zafar, Shazia Perveen and M. Zafar Iqbal,
      Proceedings of 5th International Symposium on Advanced Materials,Islamabad, Pakistan. p. 241,
      1997.

19. Electrical and Optical Deep Level Spectoscopy on Os Doped p-InP.
      Shazia Parveen, Nasim Zafar, Aurangzeb Khan, Umar S. Qurashi, and M. Zafar Iqbal, 
      Proceedings of 5th International Symposium on Advanced Materials, Islamabad, Pakistan. p. 237, 
      1997.

20. Alpha Radiation Induced Deep Levels in p-InP.
      Aurangzeb Khan, Umar S. Qurashi, Nasim Zafar, M. Zafar Iqbal, 
      A. Dadgar and D. Bimberg, Materials Science Forum, 258-263, 843 (1997).

21. Osmium Related Deep Levels in p-InP and their Interaction with Alpha Radiation.
      Shazia Parveen, Aurangzeb Khan, Umar S. Qurashi, Nasim Zafar, M. Zafar Iqbal, A. Dadgar and 
      D. Bimberg, 
      Materials Science Forum, 258-263, 831 (1997).

22. Silver-related Donor Defect in Silicon.
      M. Zhu, G. Davies, M. Zafar Iqbal and E. C. Lightowlers, 
      Materials Science Forum, 258-263, 485 (1997).

23. Man-Made Atoms - 3-Dimensional Cofinement of the Electron.
      M. Zafar Iqbal, 
      The Nucleus, 34, 175 (1997). 

24. Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by 
      Metal-Organic Chemical Vapour Deposition
      Aurangzeb Khan, M. Zafar Iqbal, Umar S. Qurashi, M. Yamaguchi, N. Zafar, 
      A. Dadgar and D. Bimberg, 
     Jpn. J. Appl. Phys. 37, 4595 (1998). 

25. Ruthenium: A Superior Compensator of InP
      A. Dadgar, O. Stenzel, A. Näser, M. Zafar Iqbal, D. Bimberg, and H. Schumann,
      Appl. Phys. Lett. 73, 3878, (1998).

26. Optical and Electrical Properties of Si+ Ion-implanted GaAs.
      T. Shima, Y. Makita, M. Zafar Iqbal, M. Kotani, T. Ida, R. Morton, S. S. Lau and N. Koura, 
      Mater. Sci. Eng. A253, 306, (1998).

27. Osmium Related Deep Levels in Indium Phosphide
      L. Köhne, A. Dadgar, D. Bimberg, M. Zafar Iqbal, U. S. Qurashi, 
      T. Grundemann, and H. Schumann, Phys. Stat. Sol. (a) 171, 521, (1999).

28. Deep Levels Associated with Alpha Irradiation of n-type MOCVD InP
      M. Zafar Iqbal, U. S. Qurashi, A. Majid, Aurangzeb Khan, Nasim Zafar, A. Dadgar and D. Bimberg, 
      Physica B 273-274, 839, (1999).