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We can regard the potential difference V0 as a 'barrier' to flow of majority carriers across the junction: the shape of the conduction band edge resembles a 'hill' which the electrons in the n-type region are unable to climb. Remembering htat holes naturally 'float' to the top o fhte valence band, the shape of its edge also represents a 'hill' in their antipodean world, preventing them from leaving hte p-region with ease.
We now show that this barrier height can be varied by applying an external voltage across the junction, making ht eflow of the majority carriers actross it easier or more difficult according to the sign of the voltage: this is hte orignin of the rectifying action.
Here are a few bullets points:
- The BUILT-IN VOLTAGE is the potential difference across a junction in zero bias conditions.
- a DEPLETION LAYER is a region depleted of mobile charge carriers.
- JUNCTION CAPACITANCE is associated with changes in width of the depletion regions.
- DIFFUSIO CAPACITANCE is due to storage of minority carrier to across the diffusion region.
- SPICE is one of the better-known suites of computer modelling programs controlled capacitor.
- A VARCTOR DIODE is a diode designed for use as a voltage controlled capacitor.
- The DIFFUSION LENGTH is the 1/e decay length of the concentration of injected minority carriers.
- The LIFETIME of minority carriers is the average time of survival of excess minority carriers before recombination occurs.
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15/8/00
