Pseudocode Example of a Process Flow Segment

START (100) p-type 10 ohm cm wafers                 ; start 100 wafers
CLEAN in H2(S0)4-H202 piranha etch, 2 min ; clean, rinse, dry
 RINSE 1, 4 min
RINSE 2, 4 min
 DRY
OXIDIZE 1 hr at 1000 C in Wet Oxygen ; oxidize
 place wafers in quartz oxidation boat
 insert into furnace ante-chamber
push at 1/2" per sec at 800 C in Oxygen
ramp to 1000 C (10 C/min), 20 min
turn on steam, 60 min
 ramp down to 800 C in Oxygen
pull at 1/2" per sec
 unload into plastic carriers