| MICRO-ELECTRONICS & INTGRATED CIRCUITS |
| PAPER NO. 1 |
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| PUT ON: Dec,2K2 |
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ECE MICRO-ELECTRONICS & INTGRATED CIRCUITS (B.Tech 6th & 7th Semester, 2122) Time : 3 Hours Maximum Marks : 60 NOTE:- This paper consist of Three Sections. Section A is compulsory. Do any Four questions from Section B and any two questions from Section C Section-A Marks : 20 1(a) What are five advantages of ICs? (b) Differentiate between LSI, MSI, SSI and VLSI. (c) Describe diffusion process. (d) What are the reasons for roaming the SiO2 layers? (e) What is meant by Polysilicon? (f) Sketch the cross-section of IC Resistor. (g) Differentiate between Zener break-down and Avalanche multiplication. (h) What are the order of magnitude of smaiiest and the largest values of an IC Resistance? (i) What are the two basic distinctions between a junction and an MOS capacitor? (j) Write important characteristics of TTL circuits. Section-B Marks:5 Each 2. What is a Schottky Transistor? How is an aluminium contact made with n type silicon is used to reduce time? 3. Describe a thin film resistor. 4. Sketch the cross-section of a junction capacitor. Draw the equilent circuit. 5. Explain the various steps involved in fabricating a Monolithic IC. 6. Explain First and Second Laws of Diffusions. Section-C Marks : 10 Each 7. (a) Describe Photoetching Process (b) Describe Epitaxial growth. 8. (a) How is the surface layer of SiO2 formed? (b) Compare various Logic families. 9. Write short notes on any two of the following: (a) Microwave Transistors (b) Packaging of ICs. (c) Photo mask preparation. |