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Molecular Beam Epitaxy (MBE)
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Molecular beam epitaxy (MBE) which refers to a process for
growing thin material using localized beams of atoms or molecules in an
ultra-high vacuum (UHV) environment to provide a source of the constituents to
the growing surface of a substrate crystal. MBE, which was originally developed
in 1970s for growing high-purity epitaxial layers of compound semiconductors [1,
2] has now become a favorite process for the growth of epitaxial films of
metals, magnetic materials, oxides and even organic structures. MBE provides a
precise control of the crystal growth compared with other methods. This is
because of the cleanliness of the surface obtained with this method due to the
UHV environment. This allow the growth of multilayered/heterostrcutures with
extremely sharp interfaces. MBE also provides the assessment of the crystal
surface by a variety of in-situ surface sensitive techniques that require high
vacuum. |
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Literature on mBE
[1] A. Cho, "Film Deposition by Molecular Beam Techniques,"
J. Vac. Sci. Tech., Vol. 8, pp.S31-S38, 1971.
[2] A. Cho, J. Arthur, "Molecular Beam Epitaxy," Prog. Solid-State Chem.,
Vol. 10, pp. 157-192, 1975.
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Useful Links (MBE):
MBE Info from The University of Texas at Austin
MBE by A. Y. Cho
MBE at University of Kiel
Ring surf Technology
MBE
around the world
Foundations:
Molecular Beam Epitaxy
Reflection High Energy
electron Diffraction (RHEED)
High Resolution X-Ray Diffraction
In-situ Kerr Effect (MOKE)
SQUID Magnetometry
Magnetotransport |