"Recent progresses in the growth, processing and characterization of silicon carbide"
P. Mandracci, G. Fanchini, S. Ferrero, C. Ricciardi, L. Scaltrito:
Recent Research Development in Applied Physics,
Transworld Research Network, Kerala, India, vol. 6 (2003) Part II, 427-450.
"Amorphous silicon nitrogen alloys deposited by PECVD under hydrogen
diluition conditions"
P. Rava, F. Giuliani, F. Giorgis, C.F. Pirri, E. Tresso, P. Mandracci,
C. Summonte, R. Rizzoli, A. Desalvo:
Physics of Semiconductor Devices, New Delhi, India, vol. 1 (1998), 580-583.
"Nonlinear Optical Study of Amorphous SiN:H Films on the Si(111) Substrate"
B. Claudet, K. Michalska-Malecka, K. Plucinski, P. Mandracci, and A. H. Reshak
Laser Physics 18 (2008), 999-1002
"Low temperature growth of thin film coatings for the surface modification of dental prostheses"
P. Mandracci, F. Mussano, C. Ricciardi, P. Ceruti, F. Pirri, S. Carossa:
Surface & Coatings Technology 202 (2008), 2477-2481
DOI: 10.1016/j.surfcoat.2007.09.050
"Silicon-carbon-oxynitrides grown by plasma-enhanced chemical vapor deposition technique"
P. Mandracci, C. Ricciardi:
Thin Solid Films 515 (2007), 7639-7642
DOI: 10.1016/j.tsf.2006.11.134
"Specific features of phototransparent properties in SiN:H films on Si (1 1 1) substrate"
I.V. Kityk, J. Ebothe, K. Ozga, P. Mandracci, S. Tkaczyk, J. Swiatek:
Physica E, 33 (2006), 169-173
"Nonlinear optical effects in amporphous-like SiCON films"
I.V. Kityk, P. Mandracci:
Physics Letters A, 340 (2005), 466-473
"IR-phototreatment of sicon films prepared by different technology"
K. Ozga, I.V. Kityk, P. Mandracci, A. Slezac:
Nonlinear Optics Quantum Optics, 33 (2005), 263-278
"Design, fabrication, and characterization of 1.5 m Omega cm/sup 2/, 800 V 4H-SiC n-type Schottky barrier diodes"
M. Furno, F. Bonani, G. Ghione, S. Ferrero, S. Porro, P. Mandracci, L. Scaltrito, D. Perrone, G. Richieri, L. Merlin:
Materials Science Forum, 483-485 (2005), 941-944.
"Growth and characterisation of polymeric amorphous carbon and carbon nitride films from propane"
G. Fanchini, P. Mandracci, A. Tagliaferro, S.E. Rodil, A. Vomiero, G. Della Mea:
Diamond and Realted Materials, 14 (2005),928-933.
"Defect influence on the electrical properties of 4H-SiC Schottky diodes"
L. Scaltrito, E. Celasco, S. Porro, S. Ferrero, F. Giorgis, C.F. Pirri, D. Perrone,
U. Meotto, P. Mandracci, G. Richieri, L. Merlin, A. Cavallini, A. Castaldini, M. Rossi:
Materials Science Forum, 457-460 (2004), 1081-1084
"Polycrystalline SiC growth and characterization"
C. Ricciardi, E. Aimo Boot, F. Giorgis, P. Mandracci, U.M. Meotto, G. Barucca,
Applied Surface Science, 238 (2004), 331-335
"Plasma-assisted SiC oxidation for power device fabrication"
P. Mandracci, S. Ferrero, S. Porro, C. Ricciardi, G. Richieri, L. Scaltrito:
Applied Surface Science, 238 (2004), 336-340
"Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes"
L. Scaltrito, S. Porro, F. Giorgis, P. Mandracci, M. Cocuzza, C.F. Pirri, C. Ricciardi,
S. Ferrero, G. Richieri, C. Sgorlon, L. Merlin, A. Cavallini, A. Castaldini:
Materials Science Forum, 433-436 (2003), 455-458
"Structural and electrical characterization of epitaxial 4H-SiC layers for power electronic
device applications"
L. Scaltrito,S. Porro, M. Cocuzza, F. Giorgis; C.F. Pirri, P. Mandracci, C. Ricciardi,
S. Ferrero, C. Sgorlon, G. Richieri, L. Merlin, A. Castaldini, A. Cavallini, L. Polenta:
Materials Science and Engineering B 102 (2003), 298-303
"Surface analysis and defect characterization of 4H-SiC wafers for power electronic
device applications"
L. Scaltrito, G. Fanchini, M. Cocuzza, F. Giorgis, C.F. Pirri, P. Mandracci, C. Ricciardi,
S. Ferrero, C. Sgorlon, G. Richieri, L. Merlin:
Diamond and Related Materials, 12 (2003), 1224-1226.
"Physical properties of ECR-CVD polycrystalline SiC films
for Micro-Electro-Mechanical systems"
C. Ricciardi, G. Fanchini, P. Mandracci:
Diamond and Related Materials, 12 (2003), 1236-1240
"Correlation between defects and electrical properties of 4H-SiC based Schottky diodes"
L. Scaltrito, S. Ferrero, S. Porro, F. Giorgis, P. Mandracci, C.F. Pirri,
C. Ricciardi, G. Richieri, C. Sgorlon, L. Merlin, A. Cavallini, A. Castaldini:
Materials Science Forum, 433-436 (2003), 455-458
"Characterization of polycrystalline SiC layers grown by ECR-PECVD
for micro-electro-mechanical system"
C. Ricciardi, E. Bennici, M. Cocuzza, P. Mandracci, D. Bich, V. Guglielmetti,
G. Barucca:
Thin Solid Films, 427 (2003), 187-190.
"Low temperature growth of SiO2 on SiC by plasma enhanced
chemical vapor deposition for power device applications"
P. Mandracci, S. Ferrero, C. Ricciardi, L. Scaltrito, G. Richieri, C. Sgorlon:
Thin Solid Films, 427 (2003), 142-146.
"Defect characterization of 4H-SiC wafers for power electronic device applications"
S. Ferrero, S. Porro, F. Giorgis, C.F: Pirri, P. Mandracci, C. Ricciardi, L. Scaltrito,
C. Sgorlon, G. Richieri, L. Merlin
Journal of Physics: Condensed Matter, 14 (2002), 13397-13407.
"Luminescence properties of amorphous silicon-nitride-based optical microcavities"
F. Giorgis, V. Ballarini, S. Ferrero, P. Mandracci, C. Ricciardi, C.F. Pirri:
Journal of Non-Crystalline Solids, 299-302 (2002), 653-657.
"Defect characterization of 4H-SiC wafers for power electronic device applications"
S. Ferrero, S. Porro, F. Giorgis, C.F. Pirri, P. Mandracci, C. Ricciardi, L. Scaltrito,
C. Sgorlon, G. RIchieri, L. Merlin:
Journal of Physics: Condensed Matter, 14 (2002), 13397-13402.
"Structural and optical properties of hydrogenated amorphous silicon-carbon
alloys grown by plasma-enhanced chemical vapour deposition at various rf
powers"
G. Ambrosone, U. Coscia, S. Ferrero, F. Giorgis, P. Mandracci, C.F. Pirri:
Philosophical Magazine B, 82 (2002) n. 1, 35-46.
"Structural and optical properties of a-Si1-xCx:H
grown by plasma enhanced CVD"
F. Giorgis, G. Ambrosone, U. Coscia, S. Ferrero, P. Mandracci, C.F. Pirri:
Applied Surface Science, 184 (2001) 204-208.
"Heteroepitaxy of 3C-SiC by electron cyclotron resonance-CVD technique"
P. Mandracci, A. Chiodoni, G. Cicero, S. Ferrero, F. Giorgis, C.F. Pirri,
G. Barucca, P. Musumeci, R. Reitano:
Applied Surface Science, 184 (2001), 43-49.
"Room temperature blue light emission from ECR-CVD deposited nano-crystalline SiC"
R. Reitano, G. Foti, C.F. Pirri, F. Giorgis, P. Mandracci:
Material Science and Engineering C, 15 (2001), 299-302.
"Optical and structural properties of SiC layers grown by an electron
cyclotron resonance CVD technique"
F. Giorgis, A. Chiodoni, G. Cicero, S. Ferrero, P. Mandracci,
G. Barucca, R. Reitano, P. Musumeci:
Diamond and Related Materials, 10 (2001), 1264-1267.
"Growth and characterization of SiC layers obtained by microwave-CVD"
P. Mandracci, S. Ferrero, G. Cicero, F. Giorgis, C.F. Pirri,
G. Barucca, R. Reitano, P. Musumeci, L. Calcagno, G. Foti:
Thin Solid Films, 383 (2001), 169-171.
"Large area microcrystalline silicon films grown by ECR-CVD"
S. Ferrero, P. Mandracci, G. Cicero, F. Giorgis, C.F. Pirri, G. Barucca:
Thin Solid Films, 383 (2001), 181-184.
"Optical absorption and luminescence properties of wide-band gap amorphous
silicon based alloys"
F. Giorgis, P. Mandracci, L. Dal Negro, C. Mazzoleni, L. Pavesi:
Journal of Non Crystalline Solids, 266-269 (2000), 588-592.
"Large area and high sensitivity a-Si:H/a-SiC:H based detectors for
visible and ultraviolet light"
P. Mandracci, F. Giorgis, C.F. Pirri, M.L. Rastello:
Review of Scientific Instruments, 70 (1999), 2235-2237.
"Stability and quantum efficiency of a novel type of a-Si:H/a.SiC:H
based UV detector"
P. Mandracci, M.L. Rastello, P. Rava, F. Giuliani, F. Giorgis:
Thin Solid Films, 337 (1999), 232-234.
"Growth of amorphous thin-films on dental prostheses for the improvement of their performance"
M. Perucca, C.F. Pirri, P. Mandracci, C. Carossa, P. Ceruti:
Proceedings of the 17th International Symposium on Plasma Chemistry, Toronto, Canada, 2005.
"Silicon carbide for application in MEMS technology and sensors"
E. Bennici, M. Cocuzza, F. Giorgis, P. Mandracci, C.F. Pirri, S. Porro, C. Ricciardi,
D. Bich, V. Guglielmetti, P. Schina, A. Taroni, D. Crescini:
Proceedings of the II National Meeting on Silicon Carbide, Parma, 18-19 March 2002.
"Processes and properties of 4H-SiC based Scottky diodes"
Ferrero S., Giorgis F., Pirri C.F., Mandracci P., Ricciardi C., Scaltrito L.,
Sgorlon C., Richieri G., Merlin L.:
Proceedings of the II National Meeting on Silicon Carbide, Parma, 18-19 March 2002.
"Defects Characterization of 4H-SiC Wafers for power electronic device applications"
Scaltrito L., Giorgis F., Pirri C.F., Mandracci P., Ferrero S.,
Sgorlon C., Richieri G., Merlin L.:
Proceedings of the II National Meeting on Silicon Carbide, Parma, 18-19 March 2002.
"Modified spontaneous emission in amorphous silicon-nitride based optical
microcavities"
Giorgis F., Ferrero S., Mandracci P., Pirri C.F, Cazzanelli M., Pavesi L.:
Mat. Res. Soc. Symp. Proc. 637 (2001) E 2.7
"Structural properties of 3C-SiC layers grown on Si substrates by Electron
Cyclotron Resonance CVD technique"
Giorgis F., Chiodoni A., Cicero G., Ferrero S., Mandracci P., Pirri C.F.,
Barucca G., Calcagno L., Foti G., Musumeci P., Reitano R.:
Mat. Res. Soc. Symp. Proc. 640 (2001) H 5.9.1
"Carbon rich a-Si1-xCx:H films: an investigation on radiative
recombination properties"
Giorgis F., Giuliani F., Pirri C.F., Tresso C.F., Mandracci P.,
Reitano R., Calcagno L., Musumeci P.:
Amorphous and Microcrystalline Silicon Technology 1998,
ed. by H. Breiz, M. Hack, R. Schropp, I. Shimizu, S. Wagner;
Mat. Res. Soc. Symp. Proc. 405 (1998).