1- Personal details

Family name: NOUIRI
First name: Abdelkader
Date of Birth: November 11, 1962
Place of Birth: Berhoum (M'sila), Algeria

 

2- Academic qualifications.

Bachelor Degree, Solid Physics (1988), University of Constantine, Algeria.
Magister (Master), « Influence of thermal treatments on the electronic properties of GaAs substrate, (1993) University of Constantine.
Doctorate (PhD) « theoretical Calculation of cathodoluminescence. Influence of surface and bulk parameters. Application at p-GaAs » (2000), University of Constantine, co-supervised in collaboration with university of Paris sud (France).

 

3- Other certificates.

Certificate of general and professional teaching, (1982), M'sila, Algeria.

Certificate of pedagogic capacity, (1983), M'sila, Algeria.

Certificate in Computer sciences, (1989), French Cultural Center, Constantine, Algeria.

English Certificate (2001), University of Constantine, Algeria.

 

4- Profession

Assistant : 1989-1993, Department of physics University of Constantine, Algeria

Maître Assistant (Assistant Professor): 1993-2001, Department of physics University of Constantine, Algeria.

Maître de conference (Associate Professor): 2001-2006, Department of physics University of Constantine, Algeria.

Professor: since July 2006, Department of physics University of Constantine, Algeria.

 

5- Other Activities.

1-     Head of Laser Project, University of Constantine, Algeria.

2-     Referee in scientific committee of Physical and Chemical News Journal (PCN), Rabat, Morocco.

3-     Member in The Arab Science & Technology Foundation (ASTF), Sharjah, United Arab Emirates

4-     Member  in the Arab Society for Material Sciences, Alexandria, Egypt

5-     Head of GAMA Association, Constantine, Algeria.

 

6- Collaboration.

- Collaboration with “Centre de Développent de Technologie Avancée”, Draria, Algiers, Algeria

- Collaboration with “Center for Theoretical and Applied Physics » CTAPS, Irbid, Jordan

- Collaboration with “ Laboratoire de Physique de la Matière », INSA Lyon, France.

- Collaboration with « Laboratoire Lasers, Plasmas et Procédés Photoniques », CNRS Université de la Méditerranée, Marseille France.

 

7- Thesis supervision and Committees

-         six (06) Master students

-         seven (07) PhD students

-         participation in eight (17) Thesis committees

 

8- Research interests

-                Production of laser and its uses in treatment and study of material

-         Laser application in the field of medicine

-         Simulation methods (Monte Carlo, molecular dynamics …..)

-         Semiconductor materials

-         Nanotechnology

 

9- Scientific production

-         Publication of eighteen (18) international articles.

-         Participation in over of twenty (20) conferences.

-         Edition of one book “Fundamentals of Industrial Drawing” (in arabic), Edition Dar El-Hoda, Algeria 1991.

 

10- Education story

-         Holy Koran 1973

-         Primary education 1974-1976

-         Middle stage 1976-1980

-         Secondary 1981-1984

-         University (graduation) 1984-1988, University of Constantine, Algeria

-         University (Magister) 1989-1993, University of Constantine, Algeria

-         University (Doctorate) 1993-2000, University of Constantine, Algeria and University of Paris-Sud, France

 

 

11- Professional story

-         Teacher in the primary school, 1980-1984

-         Instructor of technology in middle school, 1987-1989

-         Faculty member at  in university, since 1989

 

 

12- Other skills

-         Fluent in Arabic, French and English

-         Computer skills, software and hardware

-         Computer programming (basic, fortran, visual basic, HTML, …)

-         Arabic writing

-         Welding and joining of metals

-         Repairing of electrical machines

 

13-  Professional experience.

1989-1990 :
- General physics, Institute of Nutrition,, University of Constantine.
1990-1992 :
- Physics of Building, Institute of Archiiteecture, University of Constantine.
1992-2000 :
- Electrical and electronics fundamentalss ((Lectures and  labs), Institute of Physics, University of Constantine.
2000-2001 :
- Computer sciences and programming, Insttittute of Physics, University de Constantine.
2001-2007 :
- Electrical and fundamentals of electronniccs (Lectures and  labs), Department of Physics, University of Constantine.

 

14- Thesis and articles

Thesis

1- Magister (Master):

Title:Influence of thermal treatments on the electronic properties of GaAs substrate

Abstract:The study of conduction conversion of semi insulating (SI) GaAs has been made at high temperature annealing above 800°C. It was shown that (SI)GaAs crystals are converted to p-type. This phenomenon was essentially attributed to the concentration reduction of EL2 centers and the generation of acceptor defects. The analysis indicate that the acceptor concentration increases with increasing of annealing temperature and time. According to this process , it is clearly shown that both V_Ga vacancy and antisite Ga/As plays an important role in the dissociation of EL2 centers.

 

2- Doctorat d’état (PhD):

Title:Theoretical calculation of cathodoluminescence
Influence of surface and bulk physical paramaters
Aplication at p-GaAs

Abstract: A model of self-consistent calculation of the free semiconductor surface under cathodic excitation was developed. The procedure used for such calculation takes into account the depletion region and the influence of the electron beam parameters (energy Eo, intensity Ip). The recombination of minority and majority carriers at the semiconductor surface was also examined within the Schockley-Read-Hall framework. In addition, the continuity equation is solved in order to deduce in a self-consistent way the carrier concentration, the barrier height, the depletion thickness and to obtain the cathodoluminescence intensity versus the beam parameters. A p-GaAs semiconductor doped with acceptors concentration equal to Na is considered. The numerical results showed that the depletion region Zd depends on the intensity Ip, the surface parameters (the density of surface defects Nt an the energy level Et associated of surface defects), and on the bulk parameters (the concentration of acceptors Na, the diffusion length of minority carriers Ln, and the absorption coefficient a_b). Consequently, the carrier excess profiles were modified which itself affect the cathodoluminescences intensity. Some correlations between the CL intensity and the surface and bulk parameters were used to fit the experimental measurements with numerical results.

 

 Articles

 1. A. Djemel, R-J Tarento, J. Castaing, Y. Marfaing, and A. Nouiri. « Study of electronic surface properties of GaAs in cathodolumenicence experiments », Phys. Stat. Sol. (a) 168, 2, 425(1998).

 

2. A. Nouiri, A. Djemel, and R-J. Tarento, « Theoretical calculation of cathodoluminescence intensity. Influence of the depletion region associated of surface defects », Alg. J. Adv. Mat. 3, 27(1999).

 

3.  A. Nouiri, A. Djemel, and R-J. Tarento, « Theoretical calculation of cathodoluminescence intensity in GaAs. Influence of surface defects density (Nt) and concentration (Na) », Microelec. Engin. 51-52, 151(2000).

 

4. A. Nouiri,  M.Hadef, A. Djemel, R.J. Tarento, “Determination of diffusion length in GaAs using a new model of calculation of the cathodoluminescence intensity”. Journal Maghrébin de Physique Vol. 1 ,N°1, 39 , (2000)

 

5. A. Djemel,  A. Nouiri,  R.J. Tarento, “Study of surface defects in GaAs by cathodoluminescence : calculation and exprriment”. Journal of Physics : Condensed Matter.12 , 49, 10343 (2000)

 

6. A. Djemel,  A. Nouiri  , S. Kouissa, R.J. Tarento, “Cathodoluminescence calculationof n-GaAs. Surface analysis and comparison”, Physica status solidi (a), 191 ,1 ,223 (2002)

 

 7. A. Nouiri, S. Chaguetmi, A. Djemel, and R-J. Tarento «Influence of electron-beam heating on the cathodoluminescence signal. Study of p-GaAs case », Science, Technology and Education of Microscopy : an Overview, Edition : FORMATEX, Madrid (Spain), 99(2003)

 

8. A. Nouiri, Y. Sayad, A. Djemel « Study of acceptor centers in GaAs after  high temperature annealing. Experiments and calulation », phys. stat. sol. (c) 0, 2, 665(2003)

 

9. A. Nouiri, A. Djemel, and R-J. Tarento, « Calculation and experiments of cathodoluminescence intensity at p-GaAs. Influence of beam injection parameters (E₀ and I_p)”, Phys. Chem. News 1,  107 (2003)

 

10.  A. Djemel, A. Nouiri, S. Kouissa and R-J. Tarento, “Characterisation of n-GaAs by cathodoluminescence: Quantitative study and comparison”, Multidisciplinary Microscopy Research and Education, FORMATEX 2004, Spain

 

11.  Y. Sayad and A. Nouiri, “Study of donor centres in n-InSb due to the temperature annealing”, Material Science Forum, Vols 480-481, 197(2005)

 

12.  Y. Sayad and A. Nouiri, “A new calculation model of Laser Beam Induced Current technique in GaAs” Phys. Chem. News, 26, 131(2005)

 

13. Y. Sayad and A. Nouiri, “New LBIC calculation model. Application on quantum well structures”, AJAM 3, 103(2006)

 

14. A. Nouiri, S. Chaguetmi, and N. Belabed, “Monte Carlo model of the temperature rise at a GaAs surface under an electron beam”, Surf. Interf. Anal., 38, 1153(2006)

 

15.  L. Baziz, A. Nouiri, and Y. A. Youcef, “Influence of a Nanosecond Pulsed Laser on Aluminium Alloys:Distribution of Oxygen”, Laser Physics, 16, 12, (2006)

 

16. L. Baziz, A. Nouiri, and Y. A. Youcef, Abhath Al-Yarmouk Journal (Jordan), 2006

 

17. A. Nouiri, Z. Elateche, R. Aouati and N. Belabed, « Variation of GaAs surface charge under an electron beam: effect on cathodoluminescence signal”, Surf. Interface Anal, 39, (2007)752

 

18. A. Nouiri, R. Aouati, « Monte Carlo model of cathodoluminescence characterization of AlAs/GaAs/AlAs laser diode”, Physica E (2007), doi:10.1016/j.physe.2007.10.083

 

 

 

Communications
A. Nouiri, A. Djemel, and R-J. Tarento, 2^ème Congrès Euroméditérranéen de la Matière Condensée (CEM2C), 8-11 Sep. 1998, Nantes, France.

 A. Nouiri, A. Djemel, and R-J. Tarento, 6^ème Journées Maghrébines des Sciences des Matériaux (JMSM98), Annaba 9,10,11,Nov. 1998

 A. Nouiri and A. Djemel, 1^er Arab Congress on Materials Science (ACMS1) 25-27 Oct. 1999, Sidi-Bel-Abbes, Algérie

 A. Nouiri and A. Djemel, Conférence Maghrébine en Génie Electrique (CMGE’99), 4,5,6 Déc. 1999, Constantine, Algérie.

A. Nouiri, A. Djemel, and R-J. Tarento, 3^ème  Internetional Conference on Low Dimensional Structure and Devices (LDSD’99), 15-17 Sep. 1999, Antalya, Turkey

 A. Nouiri, A. Djemel, and R-J. Tarento, 6^ème International Meeting on Materials Science (IMMS’6), 3-5 Apr. 2000, M’sila, Algérie

 A. Nouiri, A. Demel, R.J.Tarento, accepted in 6 International Workshop on Beam Injection Assesment of  Microstucture in Semiconductors ( BIAMS 2000), Nov 12-16 , 2000 , FUKUOKA  JAPAN

 A. Nouiri, M. Hadef, A. Djemel, and R-J. Tarento, 7^ème Journées Maghrébines des Sciences des Matériaux (JMSM2000), Kénitra (Maroc) 20, 21 Septembre 2000

 A. Demel, A. Nouiri, S. Kouissa, R.J.Tarento, 16 International Conference on X-ray Optics and Microanalysis, July 2-6 , 2001 Vienna , Austria

 A. Nouiri, A. Demel, R.J.Tarento, 16 International Conference on X-ray Optics and Microanalysis, July 2-6 , 2001 Vienna , Austria

 A. Nouiri, A. Djemel and R-J. Tarento, Troisième colloque national de chimie, 10-11 avril 2001, Biskra, Algérie

 A. Nouiri and A. Djemel, Second Arab Congress On Material Science (ACMS-II), 25-27 October 2001 Rabat, Morocco

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 A. Demel, A. Nouiri, R.J.Tarento, Journées Maghrébines des Sciences des Matériaux Bizerte 25-27 Mars 2002 Tunisie.

 A. Nouiri, A. Demel, R.J.Tarento, Journées Maghrébines des Sciences des Matériaux Bizerte 25-27 Mars 2002 Tunisie

 A.Nouiri , Y.Sayad ,A. Djemel, 10th International Conference on Shallow Level Centers in Semiconductors. 24-27 July 2002 Warsaw Poland.

 Y. Sayad and A. Nouiri, First International Meeting on Applied Physics, 13-18^th October 2003, Badajoz, Spain

 A. Nouiri, the Third Symposium on Scientific Research and Technological Devlopment Outlook in the Arab Word (SROIII), April 11-14, 2004 Riyadh, Kingdom of Saudi Arabia

 A. Nouiri, 1^st National Conference on Radiation and its Applications (CNRA’2004, May 17-19, 2004 Algiers, Algeria

 A. Nouiri, L. Baziz and Y. A. Youcef, 6^th National Congress of Physics and its Applications (CNPA-VI’2004), December 5-7, 2004 Tiziouzou, Algeria

 M-F. Becharif and A. Nouiri, 6^th National Congress of Physics and its Applications (CNPA-VI’2004), December 5-7, 2004 Tiziouzou, Algeria

 Y. Sayad and A. Nouiri, 6^th National Congress of Physics and its Applications (CNPA-VI’2004), December 5-7, 2004 Tiziouzou, Algeria

 Y. Sayad and A. Nouiri, Fourth Arab Congress on Materials Science (ACMS-IV), 26-28 sept 2005, Tripoli, Libya

  L. Baziz, A. Nouiri and Y. A. Youcef, Fourth Arab Congress on Materials Science (ACMS-IV), 26-28 sept 2005, Tripoli, Libya

 A. Nouiri, S. Chaguetmi, and N. Belabed, 9^th European Workshop and 3^rd Meeting of the International Union of Microbeam Societies, 22^nd-26^th May 2005, Florence, Italy

 A. Nouiri and R. Aouati, Knowledge Based Industries & Nanotechnology Conference, 11 - 12 February 2008, Doha, Qatar

 

Book:

“Fundamentals of Industrial Drawing” (in Arabic), Edition Dar El-Hoda, Algeria 1991.