| NANODATARECORDERS |
| UPDATED DECEMBER 10, 2005 |
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| WO 2004 075171 DATA RECORDING USING CARBON NANOTUBE ELECTRON SOURCES OAKLEY, William, S. [LOTS Technology or Imation Corp.] September 2, 2004 Priority Feb 14, 2003 Claim 1. An apparatus comprising: a substrate; a carbon nanotube mounted on the substrate; and an extraction electrode mounted in proximity to a tip of the carbon nanotube. Link to WO 2004 075171 LOTS Technology Link to RB message on LOTS Technology WO 2005/013033 ARRAY OF CNT HEADS OAKLEY, William [likely Imation Corp.] 10 February 2005 Priority date 03 July 2003 Uses an array of 32 CNT Read-Write heads Link to WO 2005 013033 |
| Data storage device utilizing carbon nanotubes and method for operating ITRI Priority Dec 31, 2002 United States Patent Application 20040125733 Kind Code A1 Lee, Yuh-Wen ; et al. July 1, 2004 |
| Data storage device including nanotube electron sources HEWLETT-PACKARD Priority date July 6, 2001 United States Patent Application 20030007443 Kind Code A1 Nickel, Janice H. January 9, 2003 |
| Coated Nanotubes Record Light Nanomix and the University of California Combined minuscule carbon nanotube transistors and photosensitive polymer to make a fast optoelectronic memory Link |
| Tuomenin, University of Massachusetts at Amherst Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates Continued advances in technologies such as magnetic storage and optoelectronics depend crucially on the ability to produce ultrahigh-density arrays of nanometer-scale elements (1-11). As critical device dimensions shrink to the nanometer scale, the parallel fabrication of well-ordered arrays becomes increasingly difficult. We demonstrate a method to rapidly and reliably fabricate arrays with densities in excess of 1 terabit per square inch, based on the self-assembled morphology in diblock copolymer thin films. An ordered, nanoporous structure obtained from the copolymer film by chemical modification is used as a template for dc electrodeposition. The result is a highly ordered organic-inorganic hybrid structure. As an example, we fabricate well-ordered, vertical arrays of ferromagnetic nanowires with aspect ratios that are tunable over a wide range. These dense magnetic arrays show enhanced coercivity that points toward a route to ultrahigh-density magnetic storage media. Link to Science article Link to US patent-1 Link to US patent-2 |
| Information storage/Cold Cathodes/Diamond/CNT Toshiba/Matsushita/Kumar(NNPP)/KEESMANN(NNPP) Matsushita WO2004114314 Link to WO2004114314 Toshiba United States Patent 6,057,636 Link to USP 6,057,636 NNPP - Kumar United States Patent 5,659,224 Link to USP 5,659,224 I wonder, when I read these above noted patents and filings if KEESMANN applies(note the mention of carbon nano-tube in Toshiba) and if the Toshiba interest could be another of the 'other factors' involved in the NNPP discussions on IP with Toshiba. Data storage using cold cathodes including carbon nanotubes. It sounds like a very important application of CNTs to me. Link to RB message |
| ANI/University of Texas(Austin)/Bard/Thin Films/Memory/ The licensing option agreement is for eighteen months starting January 4, 2005 and provides Applied Nanotech with the time needed to design, fabricate, optimize and evaluate a 10,000 bit demonstration opto-electronic memory chip using the thin photo-conductive films of single layer composition developed in Bard's lab. The films are made of zinc octakis (beta-decoxyethyl) porphyrin, which shows fast write-read-erase capabilities. At this time the technology is not developed enough for memory device manufacturers to understand whether this technology can work. If Applied Nanotech can successfully produce this 10,000-bit-proof-of-concept device that will change. At that stage memory device manufacturers should be eager to get their hands on this technology. ``We're pleased that Zvi Yaniv and his team at Applied Nanotech are partnering with UT to move Allan Bard's research from the lab to a proof of concept that can be understood and valued by industry.'' said Dr. Neil Iscoe, director of the university's Office of Technology Commercialization. Link to PR Link to USP 5,327,373[Parent] Link to USP 5,424,974[Division] Allen J. Bard CV Link Group Link Research Link Electrochemical and Solid-State Letters -- October 2001 -- Volume 4, Issue 10, pp. E39-E41 Addressing of Optoelectronic Memory of Thin Film Zinc Porphyrin with Crossed 5 �m Indium Tin Oxide Arrays Chong-Yang Liu and Allen J. Bard Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, USA (Revised June 21, 2001; published August 14, 2001) We report here the preparation and characterization of an optoelectronic memory device based on a single layer of organic thin film (~0.9 �m thick) of zinc octakis(-decoxyethyl)porphyrin, sandwiched between two crossed indium tin oxide (ITO) arrays. The ITO lines in the array were 5 �m wide and were separated from each other by a 5 �m gap. Data (in the form of an electric charge) could be independently stored at and retrieved from an intersection of the crossed ITO lines with irradiation. Each intersection defined one memory pixel (5�5 �m) and there was no cross talk with nearby pixels under the test conditions, clearly demonstrating its potential application as an information storage device using a molecular thin film. �2001 The Electrochemical Society. All rights reserved. Article Link The Office of Technology Commercialization (OTC) at UT, Austin Optoelectronic memory system Benefits: Can store 10 to 100 times more data in the same space as current flash memory Can retain data even when power is removed Stable Rewritable Inexpensive (10 to 100 times more data for 5 times less than current flash memory) Link to Spec Sheet Display JAMIE NOVAK - ANI - Light Chip Expert Link to Austin NBC TV station article with Video presentation His United States Patent Application 20030067668 Link His United States Patent Application 20040192072 Link Link to RB nessage STACKING OF MOLECULES It's in the crystal structure - spaced columns of stacked molecules Link to RB message on Science arrticle by Bard and Liu LIQUID CRYSTAL SEEN AS TBIT STORAGE MEDIUM A liquid crystal with an unusual shape and highly efficient charge-trapping properties could emerge as the material used to make a universal solid-state memory chip. Link to EE Times article Addressing of Optoelectronic Memory of Thin Film Zinc Porphyrin with Crossed 5 mm Indium Tin Oxide Arrays Chong-Yang Liu and Allen J. Bard*,z Research supported by HP Acknowledgment We are indebted to Dr. H.-L. Pan for the synthesis of ZnODEP compound and Dr. J. Sheats for his coordination of the fabrication of ITO arrays. The support of this work by Hewlett-Packard and the ~CHE-9876855! National Science Foundation is gratefully acknowledged. The National Science Foundation assisted in meeting the publication costs of this article. Link to PDF file |
| Re Nanoimprint Technology Zvi Yaniv stated: "(with) nanoimprint lithography, a Tbit array of 20 x 20-nm memory cells could be easily constructed" Molecular Imprints : A Case Study On Success Through Strategic Industry and Academic Partnerships Link to Molecular Imprints PDF file Link to Molecular Imprints Lynn Loo - UT(Austin) - Polymer Chips - Imprint Technology These are polymer chips, otherwise known as plastic. A particularly promising technology, on account of which a young Assistant Professor at the Institute of Materials at the University of Austin, and a former researcher at Bell Labs, finds herself selected among the 100 researchers less than 35 years old by MIT�s Technology Review. Link to PDF file Link to Lynn Loo bio |
| IBM, Millipede 'Millipede' small scale MEMS prototype shown at CeBIT Link United States Patent Application 20050050258 Frommer, Jane ; et al. March 3, 2005 High density data storage medium Link NewScientist article about the CeBIT Conference Link |
| Data storage/5 orders of magnitude larger/ferroelectric nanodisks and nanorods Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 IVAN I. NAUMOV, L. BELLAICHE & HUAXIANG FU Link Data Storage May Enter New Nanotech Phase Link |
| Dawn Bonnell, University of Pennsylvania Ferroelectric Nanolithography "Ferroelectrics are clear winners," said Oak Ridge National Laboratory's Sergei Kalinin, who did key research on Penn's process while a post-doctoral student there. They can store bits of information "orders of magnitude smaller" than the magnetic media used in videotapes and computer disks, he explained in an e-mail. Flipping through PowerPoint printouts, Bonnell explains the science. The molecules of ferroelectrics can flip their electric poles because of a movable metal atom inside them. The first step is to flip all the poles on a piece of ferroelectric material the same way. Then selected spots are reversed, using a scanning probe microscope, an electron beam, or electrode stamping. The patterns can be simple - Bonnell shows a picture of nanowires a few atoms thick - or as complex as a portrait of Penn president Amy Gutmann. Metals will stick only to those charged spots, and only in the presence of light. Individual molecules can then be attached to those metal anchors. Theoretically, the steps can be repeated to create ever more complex structures. To see how far this idea can fly, Bonnell's group is trying to build a light-sensitive switch with only a handful of metal dots and a few molecules. But instead of wires, current would be conducted by a protein that shrouds a molecule of a chemical called a porphyrin, a cousin to chlorophyll. When light hits the device, current flows through it. Link to article Link to animation |