"Estrutura de minibandas de poços delta em super-redes de GaAs" (Portuguese),
L.E. Ramos, Master dissertation (1998), Universidade de São Paulo - Instituto de Física , São Paulo, Brazil.

We present a theoretical development of the k.p method and effective mass equation, particularising for heavy and light hole states of the valence band edge described by the Luttinger-Kohn Hamiltonian. A new method was used to treat isolated p-type planar doped quantum wells and superlattices, in which the potentials of carriers and fixed charges as well as envelope functions are expanded in plane waves. The method was utilized to perform systematic calculations of the miniband and sub-band structures of p-type planar doped superlattices in GaAs, studying their dependence on the superlattice period and doping concentrations. The range of superlattices periods corresponding to the transition from a superlattice regime to an isolated quantum well regime was determined. Our results provide a complete reference to optical and transport measurements in such systems. In the isolated quantum well regime, we studied the inclusion of a magnetic field in the model, with the aim of understanding the effects of magnetic fields parallely applied to planar doped layers. It is presented the theoretical development of the inclusion of the magnetic field in the Luttinger-Kohn Hamiltonian in the conditions of parabolic energy bands and taking into account also non-parabolicities of the bulk valence bands. The nature of the used method will allow to perform self-consistent calculation also in p-type planar doping systems with applies magnetic field.