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Preparation and characterisation of C60S16 and C70S48 thin films. |
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Alexandr Talyzin and Ulf Jansson |
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| Department of Inorganic Chemistry, Angstrom, Laboratory, Box 538, SE-751 21, Uppsala, Sweden |
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| Abstract. |
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| In this study, we have investigated different methods for preparation of thin films of C60 and C70-sulphur compounds. Films of good quality were obtained by reaction of amorphous C60 or C70 films with a saturated sulphur solution in toluene. Another good way to produce such films is to deposit a thin sulphur layer on top of a C60 or C70 film followed by a heat-treatment at a temperature slightly above the melting point of sulphur (119 oC) for several hours. X-ray diffraction analyses showed that both methods lead to the formation of films consisting of C60S16 and C70S48 (space groups C 2/c and Amm2 respectively). C60S16 films synthesised on Al2O3(012) and Si(100) substrates were texture-free while C70S48 films typically exhibited a preferential (100) orientation. The films were also characterised by Raman and IR spectroscopy. |
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| Both materials C60S16 and C70S48 are non conductive at room temperature. |
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