Name: Keeyoung Jun
Birth: 1971. 5. 9, born in Seoul, Korea
Nationality: Korea
Address: #3-502, 24-1, Takashimadai,
Kanagawa-ku, Yokohama-si, Kanagawa-ken
221-0833, Japan
E-mail: [email protected]
Major field: Kinetics and reaction mechanism of
CVD process
Opimization of TiN-FMCVD Process
Development of Cu-CVD process
The University of Tokyo
Device Process Engineering
My homepage (In Korean)
2004.4.-present Researcher, Applied Physics Group, Mitsubushi Heavy Industries, Ltd.
2003.4.-2004.3. Researcher, UT research institute
2000.4.-2003.3. Candidate of doctor, Department of Materials Engineering, University of Tokyo
1999.10.-2000.3. Research student, University of Tokyo
1998.8.-1999.10. Researcher, Nuclear materials laboratory, Seoul National University, Seoul, Korea
1998.4.-1998.8. Process engineer, CTI semiconductor, Choongbook, Korea
1995.3.-1997.2. Master, Department of Metallurgy engineering and Materials Science,
the Graduate School of Hong Ik University, Seoul, Korea
1993.12.-1994.2. Internship, Manufacture and Engineering Development, Motorola Korea Ltd.
1991.3.-1995.2. Bachelor, Department of Metallurgy engineering and Materials Science,
Hong Ik University, Seoul, Korea
1. Keeyoung Jun, Yasuyuki Egashira, Yukihiro Shimogaki, "Kinetics of TiN-CVD process using TiCl4 and NH3 for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH3 Partial Pressure", Jpn. J. Appl. Phy., (2004).
2. Keeyoung Jun, Yukihiro Shimogaki, "Effect of Partial Pressure of TiCl4 and NH3 on CVD-TiN Film Cl Content and Electrical Resistivity", Jpn. J. Appl. Phy. 43 (2004) L519.
3. Keeyoung Jun, Ik-Tae Im, Yukihiro Shimogaki, "Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time", Jpn. J. Appl. Phy. 43 (2004) 1619.
4. Keeyoung Jun, Yumiko Kawano, Yukihiro Shimogaki, "Optimization of TiN-Flow Modulation CVD process for ULSI barrier application", Thin Solid Films, (2004).
5. Keeyoung Jun, Yukihiro Shimogaki, "Development of TiSiN CVD process using TiCl4/SiH4/NH3 chemistry for ULSI anti-oxidation barrier applications", Sci. Technol. Adv. Mat., (2004).
6. Nam-Ihn Cho, Min Chul Kim, Kyung-Hwa Rim, Ho Jung Chang, Keeyoung Jun, Yukihiro Shimogaki, "Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology", Mater. Sci. Forum, (2004).
International conferences
1. Keeyoung Jun, Yukihiro Shimogaki, "Development of Ternary TiSiN CVD Process for Anti-oxidation Barrier Properties", International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Ise-Shima Royal Hotel, Mie, Japan, (2001).
2. Keeyoung Jun, Young-Hoon Shin, Yukihiro Shimogaki, "TiN-FMCVD Process Optimization Based on Kinetics Studies", Atomic Layer Deposition (ALD 2002) Conference, Hanyang University, Seoul, Korea, (2002).
3. Keeyoung Jun, Yukihiro Shimogaki, "Effect of Partial Pressure of TiCl4 and NH3 on TiN films by FMCVD", Fourth International Conference on Microelectronics and Interfaces (ICMI'03), Santa Clara Convention Center, Santa Clara, CA, (2003) 106.
4. Keeyoung Jun, Yukihiro Shimogaki, "Kinetic Investigation on TiN-FMCVD for High Growth Rate to Achieve Mass-Production", Advanced Metallization Conference 2003: 13th Asian Session, Sanjo Conferene Hall, Univ. of Tokyo, Tokyo, (2003).
5. Ik-Tae Im, Keeyoung Jun, Yukihiro Shimogaki, "Flow Analysis in the CVD reactor for a low chlorine TiN film deposition", Proceedings of the KSSET Fall Conference, Hanyang Univ., Korea, (2003) 1.
Domestic conferences
1. Keeyoung Jun, Yukihiro Shimogaki, "Development of CVD-TiSiN for ULSI application", The society of Chemical Engineers Japan, 2001. Fall, Japan.
2. Keeyoung Jun, Yukihiro Shimogaki, "Development of CVD process for ternary TiSiN using by SiH4 for barrier application", Japan Applied Physics Society, 2001 Fall, Japan.
3. Keeyoung Jun, Young-Hoon Shin, Yukihiro Shimogaki, "Optimization of TiN process by FMCVD", Japan Applied Physics Society, 2002 Spring, Japan.
4. Keeyoung Jun, Yukihiro Shimogaki, "Growth mechanism of TiN-CVD for advanced FMCVD process", The society of Chemical Engineers Japan, 2003 Spring, Japan.
5. Keeyoung Jun, Yukihiro Shimogaki, "Kinetics and reaction mechanism of TiN films for FMCVD process optimization", Japan Applied Physics Society, 2003 Spring, Japan.