Papers published in international journals:

1. G. Ristic, S. Golubovic, M. Pejovic, "pMOS transistors for dosimetric application", Electronics Letters, 29 (18), pp. 1644-1646 (1993).

2. M. Pejovic, G. Ristic, S. Golubovic, "A comparison between thermal annealing and UV -radiation annealing of gamma - irradiated NMOS transistors", Physica Status Solidi (a), 140, pp. K53-K57 (1993).

3. M. Pejovic, S. Golubovic, G. Ristic, M. Odalovic, "Annealing of gamma-irradiated Al - gate NMOS transistors", Solid-State Electronics, 37 (1), pp. 215-216 (1994).

4. M. Pejovic, S. Golubovic, G. Ristic, M. Odalovic, "Temperature and gate bias effects on gamma - irradiated Al - gate metal - oxide - semiiconductor transistors", Japanese Journal of Applied Physics, 33 (2), pp. 986-990 (1994).

5. G. Ristic, S. Golubovic, M. Pejovic, "pMOS dosimeter with two-layer gate oxide operated at zero and negative bias", Electronics Letters, 30 (4), pp. 295-296 (1994).

6. S. Golubovic, G. Ristic, M. Pejovic, S. Dimitrijev, "The role of interface traps in rebound mechanisms", Physica Status Solidi (a), 143, pp. 333-339 (1994).

7. M. Pejovic, J. Zivkovic, C. Milosavljevic, G. Ristic, "Formative time determination in nitrogen-filled tube using statistical methods", Japanese Journal of Applied Physics (Part 1), 34 (3), pp. 1652-1656 (1995).

8. G. Ristic, S. Golubovic, M. Pejovic, "P-channel metal-oxide-semiconductor dosimeter fading dependencies on gate bias and oxide thickness", Applied Physics Letters, 66 (1), pp. 88-89 (1995).

9. N. Stojadinovic, M. Pejovic, S. Golubovic, G. Ristic, V. Davidovic, S. Dimitrijev, "Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs", Electronics Letters, 31 (6), pp. 497-498 (1995).

10. M. Pejovic, S. Golubovic, G. Ristic, "Temperature-induced rebound in Al-gate NMOS transistors", IEE Proceedings-G: Circuits, Devices and Systems, 142 (6), pp. 413-416 (1995).

11. A. Jaksic, G. Ristic, M. Pejovic, "Rebound effect in power VDMOSFETs due to latent interface-trap generation", Electronics Letters, 31 (14), pp. 1198-1199 (1995).

12. A. Jaksic, G. Ristic, M. Pejovic, "Analysis of the processes in power VDMOSFETs during gamma-ray irradiation and subsequent thermal annealing", Physica Status Solidi (a), 155 (2), pp. 371-379 (1996).

13. G. Ristic, S. Golubovic, M. Pejovic, "Sensitivity and fading of pMOS dosimeters with thick gate oxide", Sensors and Actuators: A. Physical, A 51, pp. 153-158 (1996).

14. M. M. Pejovic, V. Lj. Markovic, G. S. Ristic, S. Mekic, "Determination of formative time of electrical breakdown in nitrogen-filled tube", IEE Proceedings - Science, Measurement and Technology, 143 (6), pp. 413-415 (1996).

15. M. Pejovic, G. Ristic, A. Jaksic, "Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing", Applied Surface Science, 108 (1), pp. 141-148 (1997).

16. M. Pejovic, G. Ristic, "Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures", Solid-State Electronics, 41 (5), pp. 715-720 (1997).

17. M. Pejovic, A. Jaksic, G. Ristic, B. Baljosevic, "Processes in n-channel MOSFETs during postirradiation thermal annealing", Radiation Physics and Chemistry, 49 (5), pp. 521-525 (1997).

18. G. Ristic, A. Jaksic, M. Pejovic, "pMOS dosimetric transistors with two-layer gate oxide", Sensors and Actuators: A. Physical, A 63, pp. 129-134 (1997).

19. M. M. Pejovic, V. Lj. Markovic, G. S. Ristic, S. Mekic, "Efficiency of copper and gold cathode in initiation of secondary emission in nitrogen-filled tube", VACUUM- Surface Engineering, Surface Instrumentation and Vacuum Technology, 48 (6), pp. 129-134 (1997).

20. G. S. Ristic, M. Pejovic, A. Jaksic, "Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing'', Journal of Applied Physics, 83 (6), pp. 2994-3000 (1998).

21. G. S. Ristic, M. M. Pejovic, A. B. Jaksic, "Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases", Microelectronic Engineering, 40 (2), pp. 51-60 (1998).

22. A. Jaksic, M. Pejovic, G. Ristic, S. Rakovic, "Latent interface-trap generation in commercial power VDMOSFETs", IEEE Trans. Nuclear Science, 45 (3), pp.1365-1371 (1998).

23. M. Pejovic, A. Jaksic, G. Ristic, "The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140 ^o C", Journal of Non-Crystalline Solid, 240, pp. 182-192 (1998).

24. M. M. Pejovic, J. P. Karamarkovic, G. S. Ristic, "The application of time delay method for analysis of processes which initiate electrical breakdown in 1.3 mbar nitrogen", IEEE Transaction of Plasma Science, 26 (6), pp. 1733-1737 (1998).

25. M. M. Pejovic, G. S. Ristic, C. S. Milosavljevic, P. D. Vukovic, J. P. Karamarkovic, "Statistical reliability of time delay values for nitrogen-filled tube at pressure of 1.3 mbar", VACUUM- Surface Engineering, Surface Instrumentation and Vacuum Technology, 53 (3-4), pp.435-440 (1999).

26. M. M. Pejovic, G. S. Ristic, Z. Lj. Petrovic, "Influence of light from nitrogen-filled lamps on time delay of electrical breakdown in nitrogen-filled tubes", Journal of Physics D: Applied Physics, 32 (13), pp. 1489-1493 (1999).

27. G. S. Ristic, M. M. Pejovic, A. B. Jaksic, "Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors", Journal of Applied Physics, 87 (7), pp. 3468-3477 (2000).

28. A. B. Jaksic, G. S. Ristic, M. M. Pejovic, "New experimental evidence of latent interface-trap build up in power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), pp. 580-586 (2000).

29. A. B. Jaksic, M. M. Pejovic, G. S. Ristic, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), pp. 659-666 (2000).

30. A. B. Jaksic, M. M. Pejovic, G. S. Ristic, "Properties of latent interface-trap building in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments", Applied Physics Letters, 77 (25), pp. 4220-4222 (2000).

31. M. M. Pejovic,  G. S. Ristic, "Nitrogen-filled tube as a sensor of ionizing radiation", Review of Scientific Instruments, 71 (6), pp. 2377-2379 (2000).

32. M. M. Pejovic, G. S. Ristic, "Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method", Journal of Physics D: Applied Physics, 33 (21), pp. 2786-2790 (2000).

33. M. M. Pejovic, G. S. Ristic, "Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method", Physics of Plasmas, 9 (1), pp. 364-370 (2002).

34.  M. M. Pejovic, G. S. Ristic, "Memory effects in argon, nitrogen and hydrogen", IEEE Transaction of Plasma Science, 30 (3), pp. 1315-1319 (2002).

35. M. M. Pejovic, G. S. Ristic, J. P. Karamarkovic, "Electrical breakdown in low pressure gases", Journal of Physics D: Applied Physics, Topical Review, 35, R91-R103 (2002).

36. M. M. Pejovic, G. S. Ristic, C. S. Milosavljevic, and M. M. Pejovic, "Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow", Journal of Physics D: Applied Physics, 35, pp. 2536-2542 (2002).

37. A. Jaksic, G. Ristic, M. Pejovic, A. Mohammadzadeh, C. Sudre, and W. Lane, "Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs”,  IEEE Trans. Nuclear Science, 49 (3), pp. 1356-1363 (2002).

38. G. S. Ristic, M. M. Pejovic, A. B. Jaksic, " Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs”, Applied Surface Science, 220, pp. 181-185 (2003).

39. W. Zhao, G. Ristic, J.A. Rowlands, "X-ray imaging performance of structured cesium iodide scintillators”, Medical Physics, 31 (9), pp. 2594-2605 (2004).

40. M. M. Pejovic, M. M. Pejovic, G. S. Ristic, "Gamma and UV radiation effects on breakdown voltage of neon-filled tube", IEEE Transaction of Plasma Science, 33 (3), pp. 1047-1052 (2005).

41. G. S. Ristic, M. M. Pejovic, A. B. Jaksic, "Fowler-Nordheim high electric field stress of power VDMOSFETs", Solid-State Electronics, 49 (7), pp. 1140-1152 (2005).

42. G. S. Ristic, M. M. Pejovic, A. B. Jaksic, "Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing", Applied Surface Science, 252 , pp. 3023-3032 (2006).

43. A. R. Lubinsky, W. Zhao, G. Ristic, J. A. Rowlands, “Screen optics effects on detective quantum efficiency in digital radiography: Zero-frequency effects”, Medical Physics, 33 (5), pp. 1499-1509 (2006).