VACUUM PRACTICE

CONTENTS

Introduction

Thermal Evaporation

The Evaporation Process

The need for vacuum

Mean free path and gas flow regimes

Some units of Pressure

Vacuum measurements

Vacuum system and components

A vacuum deposition system

Rotary pumps

Diffusion pumps

Other pumps

Schematic layout of a deposition system

Vacuum gauges

Vacuum valves

Basic requirements of a high vacuum system

Construction and use of vapor sources

Cleaning of substrates

Thickness measurements

REFERENCES

 

INTRODUCTION

 

Solid materials vaporize when heated to sufficiently high temperatures. The condensation of the vapor onto a cooler substrate yields thin films. The deposition by the thermal evaporation is simple, convenient and most widely used.

The vacuum deposition system used in the laboratory is a water-cooled deposition system backed by a rotary mechanical pump.

Model 12A4D, Hind High Vacuum Co., Bangalore, India

 

THERMAL EVAPORATION

Of the various types of thermal evaporation methods, the one used here is Resistive Heating.

Here the evaporation is accomplished by using vacuum pumps to reduce the pressure inside a chamber to a millionth of atmospheric pressure or less and then heating the material to be evaporated in a filament or boat made of refractory materials such as Tungsten, Molybdenum or Tantalum. The heat is supplied by resistive heating.

 

THE EVAPORATION PROCESS

The evaporation process and the deposition of a film can be split into four parts.

i)                    Source material (evaporant) transformed into gaseous state

ii)                  Transport source atoms to substrate

iii)                Deposit atoms on substrate and

iv)                Binding on the surface of the substrate

 

THE NEED OF VACUUM FOR THE GROWTH OF A THIN FILM

Because of collisions with ambient gas atoms, a fraction of the vapor atoms will get scattered and hence randomized during transfer through the gas.

The mean free path of the gas atoms for air molecules at 25 oC and pressures of 10-4 and 10-6 torr respectively is about 45 and 4500 c.m. Thus pressure lower than 10-5 are necessary to ensure a straight-line path for the emitted vapor atoms.

The mean free path lamda is the average distance traveled by a gas molecule between collisions with other molecules.

Where d is the molecular diameter “T” temp. in Kelvin, “P” pres. in Torr,”k” Boltzman’s const.

 

 

Mean free path is a key property in vacuum system designing.

 

MEAN FREE PATH AND THE THREE GAS FLOW REGIMES

 

Viscous flow

Mean free path << size of system (D)

Gas - gas collisions dominate

Molecules “drag” one another

 

Intermediate flow (transition)

Mean free path comparable to size of system (D)

Complicated flow

 

Molecular flow

Mean free path >> size of system

Gas - wall collisions dominate

Molecules move independently of one another

 

SOME OF THE UNITS OF PRESSURE

1 atmospheric pressure=760 m.m. of Hg.=760 Torr

1 atmospheric pressure= 1013 mbar

1 mbar = 9.8 x 10-4 atm.

 

VACUUM MEASUREMENTS

 

760-25 Torr - Low vacuum

25- 10-3 Torr - Medium Vacuum

10-3-10-6 Torr - High Vacuum

10-6-10-9 Torr - Very High Vacuum

Less than 10-9 Torr - Ultra High Vacuum

 

VACUUM SYSTEMS AND COMPONENTS

 

The performance of a vacuum system with a chamber or bell jar is the single most important consideration for vacuum deposition techniques. This consideration arises from the fact that the ultimate vacuum and residual gases and their partial pressures may influence the structure and properties of a film depending on the material. It is necessary to employ as good a vacuum condition as possible. However several factors like cost and pumping time limit the generally employed vacuum in the range 10-5 to 10-8 Torr.

 

A VACUUM DEPOSITION SYSTEM

A vacuum evaporation system/apparatus can be divided into three main parts.

i)                    Pumping system

ii)                  Coating chamber apparatus and

iii)                The electrical services

The pumping arrangement of a vacuum evaporation system suitable for routine film production (similar to the one in our laboratory) consists of a water-cooled oil diffusion pump backed by a rotary mechanical oil pump.

The arrangement of the coating chamber cannot be generalized since it depends on the nature of the coating application in hand.

 

VACUUM PUMPS

 

Oil sealed Rotary Pump

 

An eccentrically positioned rotor is fitted tightly inside a stator. Two spring loaded vanes sliding diametrically opposite slots in the rotor press against the inner surface of the stator. Friction and wear and tear are minimized by a thin oil film, which lubricates all parts of the pump and also seals the minute gap at the seat. When turned on the rotor draws air from the inlet side into the pump. The volume is then compressed and forcing the outlet valve to open and permitting the gas to be discharged. Fluids in rotary pump are either mineral oils or diphenyl ethers.

Used for obtaining “rough” vacuum (10-3 Torr)- which is the lower limit of the viscous flow regime.

 

Safety considerations

Trap vapors entering pump to prevent degradation of pump oil and seals

Do not pump on atmosphere. The pump will over heat. It is not designed to be an air compressor.

Types of Oil used in these pumps: Molecular Distilled Oil

Properties: Lubricants, doesn’t mix with water, highly resistant to corrosive gases.

Help: Better yield; better pump life and good recovery.

 

Water-cooled Diffusion Pump

A boiler heats the work fluid, and its hot vapor rises in a chimney. The direction of flow is reversed at the jet cap so that the vapor issues through the nozzle pointing away from the high vacuum side. Gas molecules from the high vacuum side diffuse through the throat and directed towards the fore vacuum side by colliding with the molecules of the working fluid. Thus a zone of reduced gas pressure is generated in the vicinity of the nozzle and more gases diffuse from the high vacuum side towards this region. Consequently this creates a region of increased pressure in the lower part of the pump from which the accumulated gas load must be removed by backing pump.

This pump is used for obtaining high vacuum.

The working range is 10-2 to 10-6 Torr. The pump works in the molecular flow regime.

Diffusion pump oils: Silicon fluids, Poly Phenyl ether fluids

Properties: Not oxidized by air at working temperatures, not hydrolyzed by water vapors

Safety considerations:

Rotary oil pump must be on to reduce the pressure to 10-2 Torr – otherwise hot oil could combust in the presence of oxygen.

Diffusion pump must be cooled with water to prevent overheating.

Vacuum line must be protected with a trap to prevent migration of diffusion pump oil.

 

OTHER PUMPS

 

Turbo Molecular Pump: Ultra-fast fan blades knock molecules out of vacuum system.

Cryo Pump: Molecules are frozen out.

Sorption Pump: Molecules diffuse into absorbing material.

Sputter Ion Pump: Molecules are ionized and buried.

 

FIGURE-1

 

SCHEMATIC OF A TYPICAL WATER COOLED DEPOSITION SYSTEM (USED IN THE LABORATORY)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FAMILIARIZATION OF THE SWITCHES/CONTROLS/VALVES – USED IN THE DEPOSITION OF OUR LABORATORY

 

VACUUM GAUGES

 

PIRANI GAUGE

A resistive wire enclosed in glass or metal envelope is connected to the system where the pressure is to be measured while being part of a wheatstone’s bridge. An identical wire in a similar but thoroughly evacuated sealed enclosure serves as the reference. Both the wires are heated by a voltage source.

At high pressures, the temperature of the sensing wire decreases s the thermal conductivity of the gas increases. Consequently the resistance of the wire decreases and the current through the unbalanced bridge indicates the change in pressure.

The applicable range is 10-3 to 10-1 Torr

 

PENNING GAUGE

 

Practically all pressure measurements below 10-3 are based on the phenomenon of residual gas ionization. To induce ionization, electrons with energies greater than the ionizing potential of the gas, usually above 50eV are injected. If they collide with the gas particles the latter becomes ionized. Electron energies of about 150eV, which yield the highest ionization rate are employed in most ionization gauges.

Generally in ionization gauges, ionization is obtained by a glow discharge and the positive gas ions generated by the electron collisions are accelerated toward a collector and the resulting current is taken as an indication of the particle density in the gauge.

 

VACUUM VALVES (WE WILL COME ACROSS IN THE DEPOSITION SYSTEM OF THE LABORATORY)

VALVES

TWO WAY VALVE (V1)

When the diffusion pump is kept continuously at working temperature it is necessary to reduce the chamber to a fraction of m.m. of mercury before opening the high vacuum valve. Otherwise the diffusion pump fluid would be blown as vapor into the backing space.

The coating chamber can be “roughed” or pre-exhausted by means of the rotary mechanical pump, which is also used for backing purposes. The rotary pump must be connected via a two-way valve to the coating chamber and to the backing side of the diffusion pump.

HIGH VACUUM /BAFFLE VALVE (V2)

Care must be taken to see that the diffusion pump is adequately baffled against direct entry of oil vapor molecules into the vacuum chamber. The diffusion pump is fitted with a combined baffle and a high vacuum valve. When the sealing plate of the valve is raised from it’s seating, the back streaming oil molecules must either collide with the sealing plate or be condensed on the water-cooled valve shell. The cooling water lead into the baffle valve prior to entry into the diffusion pump so as to ensure that the valve is the coldest region between the coating chamber and the diffusion pump.

CHAMBER AIR ADMITTANCE VALVE (V3)

We cannot evacuate the chamber with this valve in “open” condition.

Once the chamber is evacuated access to the interior of the chamber is possible only when this valve is “opened”.

 

BASIC REQUIREMENTS OF A HIGH VACUUM SYSTEM

 

  1. High pumping speeds- to ensure fast removal of gas liberated by the vapor source and collector during coating.
  2. Minimum back-streaming into the coating chamber of vapors from diffusion pump and rotary pump working fluids, which would contaminate the substrate.
  3. De-mountable systems for easy maintenance.

 

 

CONSTRUCTION AND USE OF VAPOR SOURCES

 

WIRE/FILAMENT SOURCES

Materials of construction are the refractory metals, which have high melting points and low vapor pressure. Most commonly used are Tungsten, Molybdenum or Tantalum.

The sources shown in figure A, B are commonly made from 0.02 to 0.06 inches diameter tungsten wire. Their utility is limited to evaporants, which can be affixed to the source typically in the form of wire. Upon melting, the evaporant must wet the filament and be held by its surface tension. From the symmetry of these arrangements it follows that evaporation should take place uniformly in all directions.

 

Hairpin and Helical tungsten filaments Tungsten filament basket

 

 

Wire baskets as shown in figure C are used to evaporate pellets or chips of metals, which do not wet the wire material upon heating. If wetting occurs, the turns of the basket are shorted and the temperature of the source drops.

 

Metal foils as shown in figure D & E have capacities of grams and are the most universal types of sources for small evaporant quantities. They are fabricated from sheets of tungsten, molybdenum or tantalum. The dimdpled sources have reduced widths in the center to concentrate the heating in the area of the evaporant. The recessed circles are only 1/8 or 1/4 in deep since refractory metals are not easily drawn to greater depths. Canoe or boaat sources may be made in the laboratory by bending metal sheets into the desired shape. This is readily done with tantalum and not too difficult with Molybdenum. Tungsten however is very brittle and breaks if it is bent at room temperature.

 

Dimpled foil boats (Molybdenum/tantalum)

Electrical connections to wire and foil sources are made by attaching their ends to heavy stainless-steel or copper clamps and are connected to a pair of electrical feedthroughs. Since the electrical resistance of wire and foil source is small, low voltage power supplies at 1 to 3 kW are required. Typical arrangements consist of a step down transformer (5 to 20 Volts) whose primary side is connected to a variable transformer. This is necessary to raise the operating voltage as the resistance of the refractory metals increase strongly with temperature.

 

CLEANING OF SUBSTRATES

 

When an insulating material such as glass is polished, the surface develops an electromagnetic charge, which firmly holds minute particles on the cleaned surface. These particles are subsequently responsible for pinholes in the films. To obtain the most durable and adherent coatings on glass the surface must be free from contaminant films such as grease, adsorbed water etc.

 

Glass surfaces contaminated with grease layers can be readily cleaned by immersion in water to which a detergent has been added. Adherent contaminating layers can be removed by rubbing with cotton wool impregnated with the detergent. A lukewarm, ultrasonically agitated ionic detergent removes gross contaminants. The glass is then rinsed thoroughly several times in water (de-ionized) and later subjected to vapor degreaser using pure alcohol. Cleaned glasses can be stored immersed in pure alcohol and occasionally agitated ultrasonically. Before use , the glass is dried by blowing with dry nitrogen.

 

The most important aspect of chemical cleaning is to obtain a uniform surface finish, i.e. complete freedom from oily streaks and watermarks etc.

 

THICKNESS MEASUREMENTS

 

Thickness is the single most significant film parameter. It may be measured either by in-situ monitoring of the rate of deposition or after the film is taken out of the deposition chamber.

 

Electrical methods

 

This is applicable to metallic and low resistivity semiconductor films. This technique is based on the fact that the resistance is related to the film thickness and the number of charge carriers. The situation is complex in ultrathin, structurally discontinuous films so that no reliance can be put on the resistance method in this region. The resistivity of semi-conductor films is very sensitive to deposition conditions and as a consequence the resistance method is applicable only for comparison of film thickness rather than for absolute measurements.

 

Mechanical Method (Stylus)

Variations in the movements of a mechanical stylus can be amplified electronically so that step heights and surface irregularities of approximately 10A0 can be measured.

The stylus in this case consists of a diamond with a rounded (approximately 0.7 to 1.3 micron diameter) or four-sided pyramid tip fastened to a lever arm. The arm is delicately balanced so that the load on the stylus is very small. The vertical movement of the stylus is detected with a transducer, amplified to about 100 times and then fed to a recorder.

Under the pressure of the stylus, the films of soft materials deform considerably. But a suitable choice of the tip can surmount this difficulty.

 

Optical Interference Methods

If optical constants are known, the thickness can be calculated. Among these the photometric, Spectrophotometric method and Interference fringes technique methods are based on the optical Interference phenomenon.

Some of these techniques can be used for in-situ monitoring and controlling of the deposition of films and some are suited for scanning the film and thus determining the thickness and surface roughness. The methods to be used depend on the type of deposit, deposition technique and particular use of the film.

 

Quartz crystal thickness monitors (used in our laboratory’s deposition system)

 

Microprocessor controlled digital thickness monitor uses a quartz crystal as the basic transducing element. The crystal is excited into mechanical motion by an external oscillator. The unloaded crystal vibrates in the thickness shear mode at a frequency of approximately 6 megahertz. The frequency at which the quartz crystal oscillates is lowered by the addition of material to its surface. The film thickness is then calculated from the change in crystal frequency due to the additional mass onto its surface.

 

Deposition Parameters

  1. Tooling Factor

The tooling factor parameter compensates for geometric factors in the deposition system which result ina difference between the deposition rate on the substrates and the rate on the sensing crystal. This parameter is entered in percent units and 100% corresponds to equal rates at the substrate and at the sensing crystal.

  1. Density

The density parameter provides the monitor with the density of the material being deposited so that it can calculate and display the physical film thickness.

  1. Acoustic Impedance

The shear wave acoustic impedance of the deposited film is required by the monitor in order to accurately establish the sensor scale factor when the sensor crystal is heavily loaded.

 

Reference: Detailed manual is available in the laboratory for more information on this thickness monitor.

REFERENCES

 

THINFILM PHENOMENA, K L CHOPRA

VACUUM DEPOSITION OF THIN FILMS, L HOLLAND

HAND BOOK OF THIN FILM TECHNOLOGY, L MAISSEL AND R GLANG

 

 

 

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