Updated on September 12, 2009

Ø      Education

Ø      Main Activities

Ø      Synergetic Activities

Ø      Supervisory Activities

Ø      Distinguishable Achievements

Ø      Employment History

Ø      Publication

Ø      Impact Analysis on My Research

Dr. Arijit Roy

Assistant Professor

 

Department of Electronics,

West Bengal State University,

Barasat, 24 Parganas (North),

Kolkata, India 700 126

Ph: +91-3324251976, Fax: +91-3325241977

 

e-mail: [email protected]

  

 

Interested candidate may approach me for perusing PhD

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A. Education

 

  • Ph. D. (School of EEE, NTU, Singapore)
  • M. Tech. (Instrument Tech., Indian Institute of Technology—Delhi, India)
  • M. Sc. (Physics, Indian Institute of Technology—Kharagpur, India)
  • B. Sc. (Physics Hons, University of North Bengal, India)

 

B. Main Activities

 

  • Teaching           : Courses related to “M.Sc. in Electronics”:

(1)   Programming Language – C++ : Taught Full Course in SEM–I (Full Credits = 4)

(1)   Analog Circuits and Systems : Taught 1/4 of the Course in SEM–I (Full Credits = 4)

 

(2)   Quantum Electronics and Quantum Computation: Taught Full Course in SEM–II (Full Credits = 4)

(3)   PSpice: Full Practical Course in SEM–II (Full Credits = 2)

 

  • Research          : Nanoelectronics, Electromigration, Stressmigration, STM—Thermovoltage and Optical Fiber
  • Administrative   : NA

 

C. Synergetic Activities

 

  • Reviewer for few international journals
  • [Interested] Thesis Reviewer

 

D. Supervisory Activities

 

  • List of PhD thesis: Completed: 0, In-progress: 0
  • List of Master thesis: Completed: 0, In-progress: 0
  • Industrial Attachments (IA) Projects for B.E. student: Completed: 2, In-progress: 0

1. Characterization of pop-corn effect in ICs using strain gage at Infineon Technologies Asia Pte Ltd, Singapore, 2008, NTU-BE-Student: Myint Myint.

2. Implementation of in-situ monitoring system for reliability chambers at Infineon Technologies Asia Pte Ltd, Singapore, 2008, NTU-BE-Student: Ying Hao.

 

E. Distinguishable Achievements

 

·        Published a Review Article (of size 75-Journal-Page & it is the longest documented work in the history of the topic) in a journal of impact factor 17.731

·        GATE (Physics, 1999): 31 (All India Rank)

·        Invited to write a monograph on “Electromigration”

·        Started to receive invitation to review manuscripts for possible publication in international journals during Ph.D.

·        Obtained 2nd Best paper award in ‘Symposium On Microelectronics—2004’

·        Listed in “Who’s Who in Science & Engineering” and “Who’s Who in World”

 

F. Employment History

 

·        Asst. Professor, [2 Apr 2009 to present], Dept. of Electronics, West Bengal State University, India

·        Reliability Engineer (In-charge of Product Qualification), 1-Y & 9-M [17 Jul 2007 to 31 Mar 2009], Infineon Technologies Asia Pte Ltd, Singapore

·        Research Associate, 2-Year [7 Sep 2005 to 16 Jul 2007], School of EEE, NTU, Singapore

 

G. Publication

 

              

 

·        Papers (Citation: Excludes self citation, Impact Factor: At time of publication)

     Best three papers:

Ø      Very high current density package level electromigration test for copper interconnects, Arijit Roy, Cher Ming Tan, Journal of Applied Physics, Vol. 103,    pp. 093707 (1-7), 2008, Impact Factor 2.316.

Ø      Review Article: Electromigration in ULSI interconnects, Cher Ming Tan, Arijit Roy, Materials Science and Engineering: R: Reports, Vol. 58, Issues 1-2, pp. 1-75, 2007, Impact Factor 17.731.

Ø      Electromigration in damascene copper interconnects of line width down to 100 nm, Arijit Roy, R. Kumar, C. M. Tan, T. K. S. Wong, C.-H. Tung, Semiconductor Science and Technology, Vol. 21, pp. 1369-1372, 2006, Impact Factor 1.222.

 

All papers:

1.      Electromigration in width transition copper interconnect, Arijit Roy, Yuejin Hou, Cher Ming Tan, Microelectronics Reliability, Vol. xxx, pp. xxx-xxx, 2009, Impact Factor 1.290, Cited: 0 times.

2.      Very high current density package level electromigration test for copper interconnects, Arijit Roy, Cher Ming Tan, Journal of Applied Physics, Vol. 103, pp. 093707(1-7), 2008, Impact Factor 2.316, Cited: 0 times.

3.      Application of gamma distribution in electromigration for submicron interconnects, Cher Ming Tan, Nagarajan Raghavan, Arijit Roy, Journal of Applied Physics, Vol. 102, pp. 103703(1-9), 2007, Impact Factor 2.316, Cited: 2 times.

4.      Review Article: Electromigration in ULSI interconnects, Cher Ming Tan, Arijit Roy, Materials Science and Engineering: R: Reports, Vol. 58, Issues 1-2, pp. 1-75, 2007, Impact Factor 17.731, Cited: 10 times.

5.      Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure, Arijit Roy, C. M. Tan, Thin Solid Films, Vol. 515, pp. 3867-3874, 2007, Impact factor 1.666, Cited: 0 times.

6.      Room temperature observation of point defect on gold surface using thermovoltage mapping, Arijit Roy, C. M. Tan, S. J. O’shea, K. Hippalgaokar, W. Hofbauer, Microelectronics Reliability, Vol. 47, pp. 1580-1584, 2007, Impact Factor 0.815, Cited: 0 times.

7.      Electromigration in damascene copper interconnects of line width down to 100 nm, Arijit Roy, R. Kumar, C. M. Tan, T. K. S. Wong, C.-H. Tung, Semiconductor Science and Technology, Vol. 21, pp. 1369-1372, 2006, Impact Factor 1.222, Cited: 5 times.

8.      Experimental investigation of the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect, Arijit Roy, C. M. Tan, Microelectronics Reliability, Vol. 46, pp. 1652-1656, 2006, Impact Factor 0.742, Cited: 1 times.

9.      Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects, C. M. Tan, Arijit Roy, Thin Slid Films, Vol. 504, pp. 288-293, 2006, Impact Factor 1.569, Cited: 9 times.

10.  Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron line-via test structure, Arijit Roy, C. M. Tan, R. Kumar, X. T. Chen, Microelectronics Reliability, Vol. 45, pp. 1443-1448, 2005, Impact Factor 0.607, Cited: 1 times.

11.  Current crowding effect on copper dual damascene via bottom failure for ULSI Applications, C. M. Tan, Arijit Roy, A. V. Vairagar, A. Krishnamoorthy, S. G. Mhaisalkar, IEEE Transactions on Device and Materials Reliability, Vol. 5, No. 2, pp. 198-205, 2005, Impact Factor 1.044, Cited: 13 times.

12.  Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects, C. M. Tan, Arijit Roy, K. T. Tan, D. S. K. Ye, F. Low, Microelectronics Reliability, Vol. 45, pp. 1449-1454, 2005, Impact Factor 0.607, Cited: 0 times.

13.  Optimal design of broadband long period grating-based LP01↔LP02 mode converters for dispersion compensation, Arijit Roy, P. Sharan, H. N. Acharya, Journal of Optical and Quantum Electronics, Vol. 35, Issue 6, pp. 561, 2003, Impact Factor 0.732, Cited: 0 times.

 

Leading conference papers:

14.  Stress migration reliability of wide Cu interconnects with gouging vias, Y. K. Lim, R. Arijit, K. L. Pey, C. M. Tan, C. S. Seet, T. J. Lee and Vigar, IEEE IRPS, pp. 203-208, 2005, Cited: 4 times.

15.  Extrapolation of electromigration accelerated test data for submicron interconnect via structure, Arijit Roy, C. M. Tan, Presented in ICMAT-2005.

16.  Effect of current crowding on copper dual damascene via bottom failure for ULSI applications, R. Arijit, C. M. Tan, V. V. Anand, K. Ahila, G. Zhang, M. G. Subodh, IEEE IPFA, pp. 173-176, 2004, Cited: 0 times.

17.  High bandwidth long period grating based LP mode converter in few mode fibers for dispersion compensation, Arijit Roy, Preeta Sharan, H. N. Acharya, Sixth International Conference on Optoelectronics, Fiber Optics and Photonics (technical co-sponsored by IEEE), Bombay, 2002.

 

H. Impact Analysis on My Research

 

·        Total number of paper published = 17 (13 in international journals & 4 in international conferences)

·        ∑ (Impact factor)journal only = 32.651

·        Publishing year of first and last journal paper = 2003 & 2008

·        Total citation (excluding self citation) = 45

·        h-index = 4

·        List of cited works (see the table given below)

 

My Published

Paper No

Citation Analysis Table

Cited Papers

No. of Citation

 

 

 

3
  1. V. M. Dwyer, J. Appl. Phys. 104, 053708, 2008.
  2. N. Raghavan et al., IEEE IPFA, 2008.

2

4
  1. N. Raghavan et al., IEEE IPFA, 257-262, 2007.
  2. C. M. Tan et al., Semicond. Sci. Technol. 22(8), 941-946, 2007.
  3. C. T. Sah et al., Chinese J. Semiconductors 29 (5), 815-821, 2008.
  4. N. Raghavan et al., IEEE IPFA, 2008.
  5. Y. Wang et al., Microelectronics Reliability 48, 1800-1803, 2008.
  6. G. J. Liu et al., Corrosion Science 51 (3), 463-468, 2009.
  7. J. Sarkar et al., J. of Alloys & Compounds. 479(1-2), 719-725, 2009.
  8. C. M. Tan et al., EuroSimE 2009, art. no. 4938513.
  9. L. Wu et al., J. Electrochem. Soci. 156 (9), H734-H739, 2009.
  10. T. Kizuka et al., Appl. Phys. Express 2(7), art. no. 075003, 2009.

10

7
  1. Rani S. Ghaida et al., IEEE DFT in VLSI Systems, 59-67, 2007.
  2. Y.-L. Shen, Prog. Mat. Sci. 53(5), 838-891, 2008.
  3. Y.-L. Shen, IEEE Trans. Dev. & Mat. Reliability 8, 600-607, 2008.
  4. R. S. Ghaida et al., Journal of Electronic Testing: Theory and Applications 25, 67-77, 2009.
  5. Q. Huang et al., Nanotechnology 20 (7), 075706, 2009.

5

8
  1. W. Li et al., J. Appl. Phys 105 (1), 014305, 2009.

1

9
  1. W. Li et al., J. Appl. Phys. 101(10), 104314, 2007.
  2. Y. F. Zhu et al., J. Electrochem. Society 154(3), C153-C158, 2007.
  3. W. Tang et al., J. Functional Materials 37(suppl.), 808-810, 2006.
  4. C. M. Tan et al., J. Appl. Phys. 102, 033705, 2007.
  5. W. Tazibt et al., Microelectron. Reliab. 48, 348-353, 2008.
  6. W. Tang et al., Rare Metal Materials & Engg., 37(4), 617-620, 2008.
  7. T. O. Ogurtani et al., J. Appl. Phys., 104(2), 023521, 2008.
  8. Chen et al., IEEE ICEPT-HDP, 1-7, 2008.
  9. Y. Hou et al., IEEE INEC, 610-613, 2008.

9

10
  1. W. Li et al., J. Appl. Phys. 101(10), 104314, 2007.

1

11
  1. Y. L. Hsu et al., J. Electrochem. Society 153(8), G782-786, 2006.
  2. C.-H. Lin et al., IEEE EPTC, 849-852, 2006.
  3. C. M. Tan et al., Semicond. Sci. Technol. 22(8), 941-946, 2007.
  4. Y. Hou et al., IEEE IPFA, 65-69, 2007.
  5. C. M. Tan et al., J. Appl. Phys. 102, 033705, 2007.
  6. W. Li et al., Microelectron. Reliab. 47, 1497-1501, 2007.
  7. N. Raghavan et al., IEEE IPFA, 257-262, 2007.
  8. Z. Wu et al., Microelectron. Reliab., 48, 578-583, 2008.
  9. Y. Hou et al., Semicond. Sci. Technol., 23(7), 075023, 2008.
  10. T. O. Ogurtani et al., J. Appl. Phys. 104(2), 023521, 2008.
  11. N. Raghavan et al., IEEE IPFA, 2008.
  12. M. Lin et al., IEEE IRW, 32-35, 2008.
  13. Y. Hayashi et al., IEEE Trans. Electron Devices 58 (8), 1579, 2009.

13

14
  1. Y. K. Lim et al., IEEE Technical Digest, IEDM 2005.
  2. Y. K. Lim et al., IEEE IRPS 2007.
  3. Z. Wu et al., Microelectron. Reliab., 48, 578-583, 2008.
  4. J. Ciptokusumo et al., Microelectron. Reliab., 49 (9-11), 1090, 2009.

4

          

 

 

 

 

 

 

Total number of citation

 

45

 

 

 

 

Copyright @ Dr. Arijit Roy, Department of Electronics, West Bengal State University, India

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