ENGR 334

Instructor: Dr. Atkinson

1 - Intro to Clean Room

This class so far has been an introduction to the clean room. The class has shown saftey procedures for the lab, as well as the protocals for being in the clean room. Also, we have recieved the Tyvek clean room suits and have been given a tour of the facility of what is in the clean room as well as where the emergency exits and water sprays for the body and eyes are.

2 - Cleaning of a Silicon Wafer

This class we learned how to clean a silicon wafer using a chemical process. The process uses a 5:1:1 mixture of deionized water (DI) to hydrochloric acid and heated to 75 degrees, then peroxide is added. This is for the HPM process. The APM mixture uses amonia and perozide with the deionized water. The full process completed is as follows.

PROCESS:

• RCA 1 - APM mixture (10 min)
• Rinse (DI) - (2 min)
• HF dip - hydrofluoric acid (2 min)
• Rinse (DI) - (2 min)
• RCA 2 - HPM mixture (10 min)
• Rinse (DI) - (2 min)

3 - Oxide Growth

4 - Resist Layer