Brian (Qiang) Chen                                                                        

Cupertino, CA

Phone: (408) 480-7408

E-mail: [email protected]

EXPERIENCE

Synopsys, Mountain View, CA (Apr. 2008 – Present)

Research & Development Engineer

*      Design for Manufacturing (DFM) flow optimization

o    Research opportunities to optimize the overall Design for Manufacturing (DFM) flow with particular emphasis on design links using metrics such as performance, power, throughput, and mask costs

o    Validate hypotheses from the research by building prototype flows and developing inter-tool links

o    Productize new features in tools with various other R&D teams

 

Advanced Micro Devices, Inc., Sunnyvale, CA (Sep. 2003 – Apr. 2008)

Member of Technical Staff (Aug. 2006 – Apr. 2008)

Senior Device Technology Engineer (Sep. 2003 – Aug. 2006)

*      SPICE model extraction for active/passive devices used in advanced SOI technologies

o    Varactor models for 45nm SOI technologies

o    BSIMPD/BSIMSOI models for 90nm, 65nm, 45nm, 32nm technologies (both as individual contributor and project lead)

*      Development of SPICE modeling infrastructure and methodologies

o    Evaluation of PSP-SOI compact model developed by ASU & NXP

o    Methodology for accurate off-current modeling in FB SOI MOSFETs

o    SRAM-specific SPICE model extraction methodology

o    Methodology for speculative SOI SPICE model extraction using self-heating free device targets

o    Methodology and algorithm for self-heating free I-V data extraction including body current

o    Holistic Idlow analysis methodology

o    Methodology for device DC target QA for speculative (i.e., “guess”) model generation

o    A priori  hysteresis (“history effect”) modeling methodology

o    Analysis of body current’s impact on hysteresis and its modeling

o    Analysis of analog device characteristics

o    Revelation of deficiency of using median I-V files for analog model extraction

o    Analysis of self-heating option’s impact on ring oscillator Delay-Icc correlation

o    Implementation of Indirect Body Initialization technique for ring oscillator simulation

o    Evaluation of double-gate MOSFET compact models developed by UC Berkeley

*      Device characterization (DC/AC/Transient)

o    Improvement of component current/capacitance measurement

o    S-parameter measurement

o    Interim bench measurement gate-keeper, coordinating bench data collection and performing data QA, conversion and debugging to support modeling work

*      Modeling and characterization automation

*      Test chip development for various technologies

*      Technology benchmarking and prediction

*      Statistical modeling

Georgia Institute of Technology, Atlanta, GA (June 2003 – Aug. 2003)

Postdoctoral Fellow

*      Compact modeling and simulations of QM effects in nanoscale devices

*      Development of compact voltage-current, voltage-capacitance models of double-gate MOSFETs

Georgia Institute of Technology, Atlanta, GA (Dec. 1998 – May 2003)

Graduate Research Assistant at Microelectronics Research Center

*      Developed physical, compact, analytical subthreshold swing and threshold voltage models for undoped double-gate (DG) MOSFETs

*      Developed an original, scale-length based threshold voltage variation analysis technique, and performed comprehensive analysis of process variations

*      Investigated overall impact of high-k gate dielectrics on DG MOSFET scaling

*      Projected scaling limits of DG MOSFETs based on electrostatic integrity and process tolerance requirements

*      Developed a physical via blockage model with applications to system-level a priori predictions

*      Guest lecturer for a graduate level class “Gigascale Integration

Korona Semiconductor Company, Moscow, Russia (Mar. 1996 – Nov. 1998)

Engineer - Lead Engineer

*      Performed process integration, parametric analysis, and yield analysis

*      Managed lithography section

*      Established fab floor Computer Integrated Manufacturing (CIM) computer network and developed prototype WIP tracking system

*      Participated in furnace acceptance and responsible for control system maintenance

Mikron Corporation, Moscow, Russia (Sep. 1995 – Feb. 1996)

Interning Engineer

*      Developed Si* reactive ion etching (RIE) processes and simulation tools

S.-Petersburg Electrotechnical U., S.-Petersburg, Russia (July 1994 – Aug. 1995)

Graduate Research Assistant in Quantum Optoelectronics Laboratory

*      Performed analytical modeling of excitonic absorption in semiconductors

S.-Petersburg Electrotechnical U., S.-Petersburg, Russia (Jan. 1992 – July 1994)

Undergraduate Research Assistant in Quantum Optoelectronics Laboratory

*      Studied modulated electro-optical phenomena in semiconductors

*      Developed data analysis and parameter extraction software for Deep Level Transient Spectroscopy (DLTS)

HONORS

*      Spotlight Award for ‘Pioneering and establishing extraction, modeling, and simulation methodology of MOSFET parasitic capacitances in Spice/CAD modeling-design flow,’ Advanced Micro Devices, Inc., May 2008

*      Spotlight Award for ‘Participation on the team that demonstrated and implemented a novel methodology for improving SRAM bit cell SPICE model accuracy and correlation to Silicon,’ Advanced Micro Devices, Inc., Feb. 2008

*      Member of Phase I Winning Team at Copper Design Contest by Semiconductor Research Corporation, U.S., 2000

*      Diploma with Honors, S.-Petersburg Electrotechnical University, Russia, 1996

*      Government Fellowship to Study in Soviet Union (later Russia), China, 1989 – 1996

PROFESSIONAL ACTIVITIES

*         Session Chair & Member of Technical Program Committee, IEEE Custom Integrated Circuit Conference, 2007-2008

*         Member, Compact Model Council, Model QA sub-committee, 2007-2008

*         Member, Compact Model Council, Surface-potential SOI model sub-committee, 2008

*         Session Chair & Member of Technical Review Committee, Workshop on Compact Modeling, 2007-2008

*         Reviewer for IEEE Transactions on Electron Devices (on the “Golden List” of reviewers since 2003)

*         Reviewer for Solid-State Electronics, IEE Electronics Letters, IEE Proceedings – Circuits, Devices, and Systems

TECHNICAL EXPERTISE & SKILLS

*      MOSFET device physics & circuit

o    In-depth knowledge of MOSFET physics & MOSFET scaling theories

o    Expertise in SOI MOSFET device physics and good knowledge of process flow

o    Expertise in double-gate (DG) MOSFETs

o    Good knowledge of circuit theory and analysis

*      Compact modeling

o    Expertise in BSIM-family compact spice models (BSIMPD, BSIMSOI) with good understanding of other compact spice models (PSP)

o    Expertise in interconnect distribution theory and via blockage model

*      Semiconductor processing technology & metrology

o    Hands-on experience with Agilent VNA (E8364B) and Cascade WinCal package

o    Expertise in polycrystalline silicon reactive ion etching (RIE) process development

o    Hands-on experience with semiconductor parametric analyzer (HP4145) and probe station

o    Hands-on experience with scanning electron microscope (SEM)

o    Experience in photolithography

o    In-depth knowledge and expertise in exciton theory in applications to photo-reflectance and photo-transmittance spectroscopy

o    In-depth knowledge and hands-on experience in deep level transient spectroscopy (DLTS)

*      TCAD

o    Proficiency in 2D device simulator (Medici) to assist compact model development

*      Programming languages

o    Linux/unix shell scripting, Perl scripting

o    C/C++, Fortran, Pascal, Visual Basic

*      Microelectronics and IC software packages

o    Spice model extraction: BSIMPro+, IC-CAP

o    Circuit simulator: Hspice, Spectre, Spice3

o    Layout editing and viewing: Virtuoso Layout, IC Workbench

o    TCAD: Medici

*      Technical programming: MatLab, Mathematica, Maple

EDUCATION

Georgia Institute of Technology, Atlanta, GA, U.S.
Ph.D.
Electrical and Computer Engineering          May 2003
Thesis Advisor:  Prof. James D. Meindl
Thesis Title:  Scaling Limits and Opportunities of Double-Gate MOSFETs

Georgia Institute of Technology, Atlanta, GA, U.S.
M.S.
Electrical and Computer Engineering            Dec. 2000

Saint-Petersburg State Electrotechnical University, Saint-Petersburg, Russia
M.S.
Engineering                                                    Feb. 1996
Thesis Advisors:  Dr. Vladimir N. Bliznetsov and Prof. Yurii M. Tairov
Thesis Title:  Polysilicon Reactive Ion Etching for CMOS VLSI (in Russian)

Saint-Petersburg State Electrotechnical University, Saint-Petersburg, Russia
B.S.
Engineering                                                     July 1994

Irkutsk State Technical University, Irkutsk, Russia
Preparatory Department                                          Nov. 1989 – Aug. 1990

University of Science & Technology of China, Hefei, Anhui, China
Department of Radio & Electronics                       Aug. 1989 – Nov. 1989

PUBLICATIONS & PATENTS

30+ journal and refereed conference papers

6 US patents (pending)

 

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