SPIE Proceedings Vol. 2226 

Infrared Readout Electronics II

Editor(s):  Eric R. Fossum, Jet Propulsion Lab., Pasadena, CA,
            USA.
ISBN: 0-8194-1530-8, 258 pages
Published 1994
Meeting Date: 04/04 - 04/08/94, Orlando, FL, USA



Abstracts for the papers in this volume are located in this file
immediately following the contents list below. All papers are
published by SPIE--The International Society for Optical
Engineering, P.O. Box 10, Bellingham, Washington, 98227-0010. To
order books from SPIE, call 206/676-3290, fax 206/647-1445, or
e-mail bookorders@mom.spie.org. To order papers, call SPIE
Document Express at 1-800/443-7743 (note paper title, volume and
page numbers). 

SPIE Abstracts Online is a new service provided free of charge by
SPIE to members of the optics community. We are interested in
your comments and suggestions. Please direct these, as well as
any questions regarding the service, to
net-abstracts@mom.spie.org. 

Abstracts Online is part of InCite, SPIE's indexing/abstracting
service providing access to SPIE's technical information
databases. InCite is a trademark of SPIE. 

COPYRIGHT 1993 SPIE--The International Society for Optical
Engineering. This file is intended for legitimate scholarly and
research use by members of the optics community AND IS NOT TO BE
USED FOR ANY COMMERCIAL PURPOSES. Failure of users to abide by
these guidelines will result in the discontinuation of free and
unrestricted online access to SPIE abstracts and citations. No
part of this file may be reproduced or distributed for commercial
purposes in any form, or by any means, or stored in or
transferred to any database or retrieval system without prior
written permission from SPIE. 


Contents:

* Issues in the readout of FIR- and millimeter-wave bolometers for
  astrophysical applications (Paper #: 2226-01)
* Cryogenic GaAs JFETs (Paper #: 2226-02)
* Progress on readout electronics for far-infrared arrays (Paper
  #: 2226-03)
* Low-power high-resolution superconducting flux-quantizing A/D
  converter for IR array readout (Paper #: 2226-04)
* Liquid-helium temperature operation of silicon-germanium
  heterojunction bipolar transistors (Paper #: 2226-06)
* Laser diodes for optical readout of cryo-electronics (Paper #:
  2226-07)
* Advanced multiplexed readouts for T<15K focal plane arrays
  (Paper #: 2226-08)
* One-micrometer, radiation-hardened complementary metal oxide
  semiconductor for cryogenic analog applications (Paper #:
  2226-09)
* 40K cryogenic rad-hard CMOS readout multiplexer fabrication
  process (Paper #: 2226-10)
* Hole trapping in MOSFET by hot carrier stressing and ionizing
  irradiation at 77K (Paper #: 2226-12)
* Astronomical user requirements for IR array technology (Paper #:
  2226-13)
* Infrared readout electronics: a historical perspective (Paper #:
  2226-14)
* Direct injection readout circuit model (Paper #: 2226-15)
* Buffered direct injection multiplexer for improved uniformity
  and yield in infrared cameras (Paper #: 2226-16)
* Circuit design approaches for improved radiation hardness (Paper
  #: 2226-18)
* Evaluation of the multiplexer for the Cassini visible and
  infrared mapping spectrometer focal plane array (Paper #:
  2226-19)
* Low-bias CTIA multiplexer for 1024-element InGaAs line sensors
  (Paper #: 2226-21)
* Comparative study of linear multiplexer designs for a remote
  sensing application (Paper #: 2226-22)
* Reliability of oxides at low temperatures (Paper #: 2226-31)
* Spiking oscillator networks for on-focal-plane image
  preprocessing (Paper #: 2226-25)
* Ifrared focal plane array optical interface technology (Paper #:
  2226-23)
* Approaches and analysis for on-focal-plane analog-to-digital
  conversion (Paper #: 2226-24)
* Unique 3D architecture for high-resolution imaging (Paper #:
  2226-27)
* Low-noise CCD signal acquisition techniques (Paper #: 2226-29)
* Functional variation of dual gate MOS-JFET CCD test structure
  (Paper #: 2226-30)


Abstracts:

Paper #: 2226-09
One-micrometer, radiation-hardened complementary metal oxide
semiconductor for cryogenic analog applications, pp.72-84
Author(s):  Imelda Groves, Texas Instruments Inc., Sachse, TX,
            USA;
            George Brown, Texas Instruments Inc., Dallas, TX,
            USA;
            G.Pollack, Texas Instruments Inc., Dallas, TX, USA;
            K.Green, Texas Instruments Inc., Dallas, TX, USA;
            L.Dawson, Rockwell International Corp., Anaheim, CA,
            USA;
            A.D'Souza, Rockwell International Corp., Anaheim,
            CA, USA;
            C.Lin, Univ. of California/Los Angeles, Los Angeles,
            CA, USA;
            M.Song, Univ. of California/Los Angeles,
            Los Angeles, CA, USA;
            C.Hwang, Univ. of California/Los Angeles,
            Los Angeles, CA, USA;
            Jason C. Woo, Univ. of California/Los Angeles,
            Los Angeles, CA, USA;
            Kenneth P. MacWilliams, The Aerospace Corp.,
            Los Angeles, CA, USA.

Abstract: Results are presented of a process-development effort
          to achieve a 1-Mrad silicon (Si) radiation-hardening
          capability at temperatures down to 40 K, using Texas
          Instruments high volume, 1-micrometer commercial
          process. The one-micrometer process was characterized
          at 77 K and 40 K: radiation effects on the baseline
          SiO$-2$/ gate dielectric and N-channel field effect
          transistor edges were observed, as were freeze-out and
          hot-carrier effects of the lightly doped drain
          implants. These freeze-out phenomena were confirmed,
          using SUPREM, MINIMOS, and MEDICI. The simulated data
          compared favorably with measured results. Simulations
          were run, using various implant doses and profiles to
          eliminate the freeze-out and hot-carrier effects in the
          new process. Devices having these simulated profiles
          were processed, and the results are presented.!4