NO. DE PÁGINAS: 476

CONTENIDO:

Considerable progress has been made in discrete power semiconductor device technology. The most important development is the creation of a new family of power devices with high-input-impedance metal oxide-semiconductor (MOS) gates. These devices greatly reduce the size and complexity of the control circuitry. This has allowed a large reduction in system cost, making the power electronics attractive for many new applications such as control of borne appliances and for automotive electronics. In addition, several other new device concepts, such as the field-controlled diode (FCD) and the high-voltage junction field-effect transistor (JFET), have been explored for applications in power circuits. Despite the growing interest in this field, no book has been available that treats the physics and technology of these modern power devices. This book is written at the tutorial level to fill this need. It can be used for self-study by professional engineers practicing the art of power device design and fabrication. It can also serve as a textbook for a graduate level course on power devices when used together with Professor Ghandhi's book. In writing the book, it has been assumed that the reader is familiar with the fundamental concepts of current transport in semiconductors and has a basic knowledge of process technology. Each chapter is organized to first introduce the basic device structure and its electrical output characteristics.