Henry Pinto
Laboratory of Physics
Helsinki University of Technology
P.O. Box 1100
FIN-02015 TKK
Finland |
Education:
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Contact:
Telephone: +593-(0)9053 8125
E-Mail: pavlvs.pinto(at)gmail.com
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Academic Experience:
- 1998- Researcher, Centro de Investigacion en Fisica
de la Materia Condensada, Corporacion de Fisica
Fundamental y Aplicada, Quito, Ecuador.
- 1999-2000 Researcher Associate,
Laboratory of Physics,
Helsinki University of Technology, Helsinki, Finland.
- 2001 Visiting Scientist, Department of Materials Science
and Engineering,
Nagoya University,
Nagoya, Japan.
- 2002-2006 Ph.D Student, Tyndall National Institute at
University College Cork,
Cork, Ireland.
(Ph.D dissertation date: 1-02-2007)
- 2006-2009 Post-Doctoral Associate,
Laboratory of Physics,
Helsinki University of Technology, Helsinki, Finland.
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Teaching:
No teaching for the moment @ HUT.
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My CV is online here.
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Research interests |
| | Strongly correlated systems, Metal oxides surfaces and interfaces, Metal-insulator transitions,
scanning tunneling microscopy, point defects, spintronics. | |
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Projects: |
| Projects @ Laboratory of Physics, Helsinki University of Technology | | 1) Manipulation of the electronic structure of individual molecules on insulating surfaces.
2) Realistic scanning tunneling microscopy simulations on TiO2 surfaces
3) Strong electron correlation on Fe3O4 surfaces | |
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Publications: |
| Title | Authors | Publication |
| Imaging the hydrogen subsurface site in rutile TiO2 | G. H. Enevoldsen, H. P. Pinto, A. S. Foster, M. C. R. Jensen, W. A. Hofer, B. Hammer, J. V. Lauritsen, F. Besenbacher | Phys. Rev. Lett. (2009), accepted |
| Detailed scanning probe microscopy tip models determined from simultaneous atom-resolved AFM and STM studies of the TiO2(110) surface | G. H. Enevoldsen, H. P. Pinto, A. S. Foster, M. C. R. Jensen, A. Kühnle, M. Reichling, W. A. Hofer, J. V. Lauritsen, F. Besenbacher | Phys. Rev. B 78, 045416 (2008) |
| Electronic Structure, Chemical Bonding, and Geometry of Pure and Sr-Doped CaCO3 | A. Stashans, C. Chamba and H. P. Pinto | J. Comput. Chem. 29, 343 (2007) |
| Mechanism of the Verwey transition in magnetite: Jahn-Teller distortion and charge ordering patterns | H. P. Pinto and S. D. Elliott | J. Phys.: Condens. Matter 18, 10427-10436 (2006) |
| Modelling the deposition of high-k dielectric films by first principles | S. D. Elliott, H. P. Pinto | J. Electroceram. 13, 117 (2004). |
| Ab initio study of gamma-Al2O3 surfaces | H. P. Pinto, R. M. Nieminen and S. D. Elliott | Phys. Rev. B 70, 125402 (2004). |
Theoretical study of structural and optical properties of
F-centers in tetragonal BaTiO3
| H. Pinto, S. Elliott and A. Stashans | Proceedings of SPIE 5122, 303 (2003),
ed. A. Krumins et al.
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| First Principles modelling of high-k dielectric films | S. D. Elliott, S. Monaghan, H. Pinto, J. C. Greer | Electrochem. Soc. Proc. Vol., 2003-14, 231 (2003). |
| Ab-initio study on the gamma-Al2O3 surfaces and interfaces | H. P. Pinto, S. D. Elliott | Mater. Res. Soc. Symp. Proc. 786, E5.21-E5.28 (2003). |
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| Superconductivity and JT polarons in titanates | A. Stashans, H. P. Pinto, P. Sanchez | J. of Low Temp. Phys. 130, 415 (2003) | | Density-functional study of impurity-related DX centers in CdF2 | H. P. Pinto, R. M. Nieminen | Comput. Mat. Sci. 25, 404 (2002) | | Computational study of self-trapped hole polarons in tetragonal
BaTiO3 | H. P. Pinto, A. Stashans | Phys. Rev. B 65, 134304 (2002) | | Theoretical study of oxygen-vacancy defects in
ferroelectric BaTiO3 | H. P. Pinto, M. Yoshino, M. Morinaga, A. Stashans, R. M. Nieminen | Bulletin of the Society for Discrete Variational X-a
Japan 14, 114 (2001) | | Analysis of radiation induced hole localisation in titanates | A. Stashans, H. P. Pinto | Rad. Measurements 33/35, 553 (2001) | | Hole polarons in pure BaTiO3 studied by computer modelling | A. Stashans, H. P. Pinto | Int. J. Quant. Chem.79, 358 (2000) | | Quantum-chemical simulation of Al- and Sc-bound hole polarons
in BaTiO3 crystal | H. P. Pinto, A. Stashans | Comput. Mat. Sci.17, 73 (2000) | | Theoretical studies of impurity doped and undoped BaTiO3 and
SrTiO3 crystals | H. P. Pinto, A. Stashans, P. Sanchez | In Defects and Surface-Induced Effects in Advanced Perovskites,
NATO Science Series High Technology, Vol. 77, p. 67 (2000) |
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Presentations: |
| Title | Authors | Presented at | | Strong correlation, charge ordering and magnetic properties of Fe3O4(0 0 1) surfaces | H. P. Pinto and S. D. Elliott | Laboratory of Physics, Helsinki University of Technology, 19 Oct 2006 | | Atomic-scale modelling of magnetite for future spintronic devices | H. P. Pinto and S. D. Elliott | Irish Association for High Performance Computing, Cork, Ireland, 8-9 Jun 2006. | | Strongly correlated electrons in Fe3O4 - a DFT+U approach | H. P. Pinto and S. D. Elliott | 10th Irish Atomistic Simulators Meeting, Trinity College Dublin, Ireland, 19-20 Dec 2005 | | Strongly correlated electrons in Fe3O4 - a DFT+U approach | H. P. Pinto and S. D. Elliott | IRCSET Symposium, Dublin, Ireland, 4 Nov 2005. | | Theoretical studies on strongly correlated systems: bulk and surfaces of magnetite Fe3O4 | H. Pinto and S. D. Elliott | APS March Meeting, Los Angeles CA, 23.03.2005 | | Charge and spin order in the surfaces of magnetite for spintronics | H. P. Pinto and S. D. Elliott | 57th Irish Universities Chemistry Research Colloquium, NUI Maynooth, Ireland, 22-24 Jun 2005 | | Charge and spin order in the bulk and surface of magnetite | S. D. Elliott and H. P. Pinto | Seagate Nanomagnetics Workshop, Derry, UK, 30 Jun - 01 Jul 2005 | | Modelling the deposition of high-k dielectric films by first principles | S. D. Elliott, H. P. Pinto | International Conference on Electroceramics, MIT, Cambridge MA, USA, 3-7 August 2003 | | DFT+U studies on the strongly correlated system magnetite | H. P. Pinto and S. D. Elliott | 9th Irish Atomistic Simulators Meeting, Cork, 16-17.12.2004 | | Computational studies on oxides: gamma-Al2O3 and Fe3O4 | H. P. Pinto and S. D. Elliott | Helsinki Univeristy of Technology, Finland, Helsinki, 9th June 2004 | Theoretical study of structural and optical properties of
F-centers in tetragonal BaTiO3
| H. Pinto, S. Elliott and A. Stashans | SPIE (2003), `Advanced Organic and Inorganic Optical Materials'. | | First Principles modelling of high-k dielectric films | S. D. Elliott, S. Monaghan, H. Pinto, J. C. Greer | 203rd Meeting of the Electrochemical Society, Paris, F, 27 Apr - 2 May 2003 | | Atomic Layer Deposition and phase segregation | S. D. Elliott, H. P. Pinto, S. G. Monaghan, J. C. Greer | ESF workshop "Growth, structure and electrical properties of high-k gate dielectrics: atomistic modeling vs experiment", Rueschlikon, CH, 17-18 March 2003. | | Ab-initio study on the gamma-Al2O3 surfaces and interfaces | H. P. Pinto, S. D. Elliott | MRS Fall Meeting, Boston MA, USA, 1-5 December 2003 | | Ab-initio study on the gamma-Al2O3 surfaces and interfaces | H. P. Pinto, S. D. Elliott | IRCSET Symposium, Ireland, 7 November 2003 | | First Principles study on the structure of the (001) surface of gamma-Al2O3 | H. P. Pinto, S. D. Elliott & J. C. Greer | 7th Irish Atomistic Simulators Meeting, Dublin, Ireland, 16-17 Dec 2002 |
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